Technical Data 11134 Effective September 2020 STN161XXXUXXX TVS Diode ESD suppressor Applications Cellular phones Wearables Portable electronics Laptop/notebook computers Digital cameras Environmental compliance and general Product features specifications Protects one I/O or power line IEC61000-4-2 (ESD) Low clamping voltage Up to 30 kV (air) Low leakage current Up to 30 kV (contact)) Meets moisture sensitivity level (MSL) 3 IEC61000-4-5 (Lightning) Up to 110 A (8/20 s) Molding compound flammability rating: UL 94V-0 HALOGEN Termination finish: Tin HF Pb FREE Ordering part number 1 050 ST N16 U 852 Family Package (N16=DFN1610) Number of channels (1) Operating voltage (050 = 5 V) Bi/Uni directional (U=Uni) Capacitance (852 = 850 pF) Pin out/functional diagramTechnical Data 11134 STN161XXXUXXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN161XXXUXXX Peak pulse power dissipation on 8/20 s waveform P 2000 W pp ESD per IEC 61000-4-2 (Air) V +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STN161050U852 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6 7 8 V (V) T BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Peak pulse current t = 8/20 s - - 110 I (A) p pp Clamping voltage I 50 A, - 11 14 V (V) pp = C t = 8/20 s p I 80 A, - 13 15 V (V) pp = C t = 8/20 s p I 110 A, - 14 17 V (V) pp = C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 850 1050 C (pF) RWM J STN161070U722 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 7.0 V (V) RWM Reverse breakdown voltage I = 1 mA 7.5 8 9 V (V) T BR Reverse leakage current V = 7 V - - 1 I (A) RWM R Forward voltage I = 10 mA 0.6 - 1 V F F Peak pulse current t = 8/20 s - - 100 I (A) p pp Clamping voltage I 50 A, - 12 15 V (V) pp = C t = 8/20 s p I 10 A, 15 18 V (V) pp = C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 720 900 C (pF) RWM J 2 www.eaton.com/electronics