Effective May 2021 Technical Data 11135 Supersedes September 2020 STN202XXXUXXX TVS Diode array ESD suppressor Applications Power lines DC Fast charging Microprocessors based equipment Notebooks, desktops, and servers Cellular handsets and accessories Portable electronics and peripherals Environmental compliance and general Product features specifications Low leakage current IEC61000-4-2 (ESD) Low clamping voltage Up to 30 kV (air) Solid-state silicon-avalanche technology Up to 30 kV (contact) Meets moisture sensitivity level (MSL) 3 IEC61000-4-5 (Lightning) Up to 240 A (8/20 s) Molding compound flammability rating: HALOGEN UL 94V-0 Pb HF Termination finish:Tin plating FREE Ordering part number ST N20 2 075 U 173 Family Package (N20- DFN2x2) Number of channels (2) Operating voltage (075- 7.5 V) Bi/Uni directional (U- Uni) Capacitance (173- 1700 pF) Pin out/functional diagramTechnical Data 11135 STN202XXXUXXX Effective May 2021 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN202075U173 STN202120U952 STN202150U952 STN202240U752 Peak pulse power dissipation on 8/20 s waveform P 5000 4500 4500 6000 W pp ESD per IEC 61000-4-2 (Air) V +/-30 +/-30 +/-30 +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 +/-30 +/-30 +/-30 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN202075U173 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 7.5 V (V) RWM Reverse breakdown voltage I = 1 mA 8 9 10 V (V) T BR Reverse leakage current V = 7.5 V - - 1 I (A) RWM R Clamping voltage I = 50 A, - 13 15.5 V (V) PP C t = 8/20 s p I = 100 A, - 15.5 18.5 V (V) PP C t = 8/20 s p I = 240 A, - 21 25 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz 1600 1700 2200 C (pF) RWM J STN202120U952 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 12 V (V) RWM Reverse breakdown voltage I = 1 mA 13 14.5 16 V (V) T BR Reverse leakage current V = 12 V - - 1 I (A) RWM R Clamping voltage I = 50 A, - - 22 V (V) PP C t = 8/20 s p I = 100 A, - - 25 V (V) PP C t = 8/20 s p I = 180 A, - - 32 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz 900 950 1200 C (pF) RWM J STN202150U952 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 15 V (V) RWM Reverse breakdown voltage I = 1 mA 16 17.5 19 V (V) T BR Reverse leakage current V = 15 V - - 1 I (A) RWM R Clamping voltage I = 50 A, - 22 25 V (V) PP C t = 8/20 s p I = 100 A, - 25 27 V (V) PP C t = 8/20 s p I = 150 A, - 29 35 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 950 1200 C (pF) RWM J 2 www.eaton.com/electronics