Technical Data 11136 Effective September 2020 STN254033UL33 and STN254033UL50 TVS Diode array ESD suppressor Applications Serial ATA PCI express Desktops, servers and notebooks MDDI ports USB 2.0, 3.0 and 3.1 Display ports HDMI 1.3, 1.4 and 2.0 Digital visual interfaces (DVI) Product features Solid-state silicon-avalanche technology Environmental compliance and general Up to four I/O lines of protection specifications Low operating and clamping voltage IEC61000-4-2 (ESD) Ultra low capacitance Up to 15 kV (air) Low leakage current Up to 15 kV (contact) Moisture sensitivity level (MSL): 3 IEC61000-4-5 (Lightning) Up to 7 A (8/20 s) Molding compound flammability rating: UL 94V-0 HALOGEN Termination finish:Ni/Pd/Au HF Pb FREE Ordering part number ST N25 4 033 U L33 Family Package (N25- DFN2510) Number of channels (4- 4) Operating voltage (033- 3.3 V) Bi/Uni directional (U- Uni) Capacitance (L33- 0.33 pF) Pin out/functional diagramTechnical Data 11136 STN254033UL33 and STN254033UL50 Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN254033UL33 STN254033UL50 Peak pulse power dissipation on 8/20 s waveform Ppp 30 70 W ESD per IEC 61000-4-2 (Air) V +/-15 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-8 +/-15 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN254033UL33 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 3.3 V (V) RWM Reverse leakage current I/O to GND - 0.1 1.0 I (A) R V = 3.3 V RWM Reverse triggering voltage I/O to GND 3.8 - V (V) t1 I = 1 A t1 Reverse holding voltage I/O to GND 3.5 5.5 - V (V) h I = 50 mA h1 Clamping voltage I = 1 A, - 8 9 V (V) PP C t = 8/20 s p I = 3 A, - 10 11 V (V) PP C t = 8/20 s p Junction capacitance V = 3.3 V, f = 1 MHz - 0.33 0.39 C (pF) RWM J I/O pin to GND V = 3.3 V, f = 1 MHz - 0.2 0.3 C (pF) RWM J Between I/O pins STN254033UL50 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 3.3 V (V) RWM Reverse leakage current I/O to GND 0.1 - - I (A) R V = 3.3 V RWM Reverse breakdown voltage I/O to GND 4.0 10 V (V) BR I = 1 mA t Clamping voltage I = 1 A, - 5.5 6.5 V (V) PP C t = 8/20 s p I = 5.0 A, - 7.5 8.5 V (V) PP C t = 8/20 s p I = 7.0 A, - 9 10.5 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 0.5 0.6 C (pF) RWM J I/O pin to GND V = 0 V, f = 1 MHz - 0.25 0.35 C (pF) RWM J Between I/O pins 2 www.eaton.com/electronics