STN254050UL50 Eaton

Technical Data 11143 Effective September 2020 STN254050UL50 and STN254050UL50H TVS Diode array ESD suppressor Applications Digital visual interface (DVI) Display port TM interface MDDI ports PCI express SATA interfaces High definition multi-media interface (HDMI) Environmental compliance and general Product features specifications Solid-state silicon-avalanche technology IEC61000-4-2 (ESD) Up to four I/O lines of protection Up to 20 kV (air) Low operating voltage Up to 20 kV (contact) Ultra low capacitance: 0.25 pF typical (I/O IEC61000-4-5 (Lightning) 5 A (8/20 s) to I/O) HALOGEN Low operating and clamping voltage Pb HF Low leakage current FREE High ESD withstand option available Meets moisture sensitivity level (MSL) 3 Ordering part number Molding compound flammability rating: UL 94V-0 ST N25 4 050 U L50 H Termination finish: Ni/Pd/Au Family Package (N25- DFN2510) Number of channels (4- 4) Operating voltage (050- 5 V) Bi/Uni directional (U- Uni) Capacitance (L50- 0.5 pF) Optional suffix (H-High ESD) Pin out/functional diagramTechnical Data 11143 STN254050UL50 and STN254050UL50H Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Unit Value STN254050UL50H STN254050UL50 Peak pulse power dissipation on 8/20 s waveform Ppp 100 100 W ESD per IEC 61000-4-2 (Air) V +/-20 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-20 +/-8 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN254050UL50H Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 5 V (V) RWM Reverse breakdown voltage I/O to GND 6.0 - 8.5 V (V) BR I = 1 mA T Reverse leakage current I/O to GND - - 0.5 I (A) R V = 5 V RWM Clamping voltage* I = 1 A, t = 8/20 s - 9.5 10.5 V (V) PP p C I = 5 A, t = 8/20 s - 13 15 V (V) PP p C - - - - Junction capacitance V = 0 V, f = 1 MHz - 0.5 0.65 C (pF) RWM J I/O pin to GND V = 0 V, f = 1 MHz - 0.25 0.35 C (pF) RWM J Between I/O pins STN254050UL50 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 5.0 V (V) RWM Reverse breakdown voltage I/O to GND 6.0 - 9.0 V (V) BR I = 1 mA T Reverse leakage current I/O to GND 0.1- 1.0- I (A) R V = 5.0 V RWM Clamping voltage* I = 1 A, t = 8/20 s - 9.0 6.5 V (V) PP p C I = 3.5 A, t = 8/20 s - 11 12 V (V) PP p C Junction capacitance V = 0 V, f = 1 MHz - 0.5 0.65 C (pF) RWM J I/O pin to GND V = 0 V, f = 1 MHz - 0.25 0.4 C (pF) RWM J Between I/O pins * Non-repetitive current pulse, according to IEC61000-4-5. 2 www.eaton.com/electronics