Technical Data 11147 Effective September 2020 STS232XXXBXXX TVS Diode array ESD suppressor Applications RS-232, RS-422 & RS-485 Servers, notebook, and desktop Cellular handsets and accessories Control & monitoring systems Portable electronics Wireless bus protection Set-top box Product features Environmental compliance and general 350 Watts peak pulse power per line specifications (t =8/20 s) p IEC61000-4-2 (ESD) Protects two I/O lines with uni-directional Up to 30 kV (air) Low clamping voltage Up to 30 kV (contact) Low leakage current IEC61000-4-5 (Lightning) Up to 20 A (8/20 s) Meets moisture sensitivity level (MSL) 3 HALOGEN Molding compound flammability rating: UL 94V-0 HF Pb Termination finish:Tin FREE Ordering part number 2 033 ST S23 B 102 Family Package (S23=SOT23) Number of channels (2=2) Operating voltage (033 = 3.3 V) Bi/Uni directional (B=Bi) Capacitance (102 = 100 pF) Pin out/functional diagramTechnical Data 11147 STS232XXXBXXX Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STS232033B102, STS232240B151 STS232050B751, STS232120B301, STS232150B251, STS232360B151 Peak pulse power dissipation on 8/20 s waveform P 350 350 W pp ESD per IEC 61000-4-2 (Air) V +/-15 +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-8 +/-30 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STS232033B102 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 3.6 - - V (V) T BR Reverse leakage current V = 3.3 V - - 1 I (A) RWM R Clamping voltage I 1 A, - - 8 V (V) pp = C t = 8/20 s p I 20 A, - - 26 V (V) pp = C t = 8/20 s p Junction capacitance* V = 0V, f = 1 MHz - 100 - C (pF) RWM J STS232050B751 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 5.5 - - V (V) T BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Clamping voltage I 1 A, - - 9.8 V (V) pp = C t = 8/20 s p I 18 A, - - 16.7 V (V) pp = C t = 8/20 s p Junction capacitance* V = 0V, f = 1 MHz - 75 - C (pF) RWM J 2 www.eaton.com/electronics