Technical Data 11148 Effective September 2020 STS232XXXUXXX TVS Diode array ESD suppressor Applications RS-232, RS-422 & RS-485 Servers, notebook, and desktop Cellular handsets and accessories Control & monitoring systems Portable electronics Wireless bus protection Set-top box Product features Environmental compliance and general 350 Watts peak pulse power per line specifications (t =8/20 s) P IEC61000-4-2 (ESD) Protects two I/O lines with uni-directional Up to 15 kV (air) Low clamping voltage Up to 8 kV (contact) Low leakage current IEC61000-4-5 (Lightning) Up to 180 A (8/20 s) Meets moisture sensitivity level (MSL) 3 HALOGEN Molding compound flammability rating: UL 94V-0 HF Pb FREE Termination finish:Tin Ordering part number ST S23 2 050 U 152 Family Package (S23- SOT23) Number of channels (2- 2) Operating voltage (050- 5 V) Bi/Uni directional (U- Uni) Capacitance (152- 150 pF) Pin out/functional diagramTechnical Data 11148 STS232XXXUXXX Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Peak pulse power dissipation on 8/20 s waveform P 350 W pp ESD per IEC 61000-4-2 (Air) V +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-8 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STS232050U152 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - - V (V) T BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 9.8 V (V) PP C t = 8/20 s p I = 18 A, - - 16.7 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 150 180 C (pF) RWM J STS232120U581 Parameter Test condition Minimum Typical Maximum Symbol (Units Reverse working voltage - - - 12 V (V) RWM Reverse breakdown voltage I = 1 mA 13.3 - - V (V) T BR Reverse leakage current V = 12 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 19 V (V) PP C t = 8/20 s p I = 12 A, - - 25 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 58 70 C (pF) RWM J STS232150U451 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 15 V (V) RWM Reverse breakdown voltage I = 1 mA 16.7 - - V (V) T BR Reverse leakage current V = 15 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 24 V (V) PP C t = 8/20 s p I = 10 A, - - 35 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 45 - C (pF) RWM J 2 www.eaton.com/electronics