Technical Data 11157 Effective September 2020 STS232712B451 TVS Diode array ESD suppressor Applications Protection of RS-485 transceivers with extended common-mode range Security systems Automatic teller machines HFC systems Networks Environmental compliance and general specifications Product features IEC61000-4-2 (ESD) 400 watts peak pulse power per line (t = 8/20 s) P 15 kV (air) Protects two 7 V to 12 V lines 8 kV (contact) Low clamping voltage IEC61000-4-5 (Lightning) 12 A (8/20 s) Low capacitance HALOGEN Solid-state silicon avalanche technology HF Pb Meets moisture sensitivity level (MSL) 3 FREE Molding compound flammability rating: UL 94V-0 Termination finish: Tin Ordering part number ST S23 2 712 B 451 Family Package (S23- SOT23) Number of channels (2-2) Operating voltage (712-7 V/12 V) Bi/Uni directional (B- Bi) Capacitance (451- 45 pF) Pin out/functional diagramTechnical Data 11157 STS232712B451 Effective Sepetmber 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) STS232712B451 Parameter Symbol Value Unit Peak pulse power dissipation on 8/20 s waveform P 400 W pp ESD per IEC 61000-4-2 (Air) V +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-8 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) Pins 1, Pin 2 to Pin 3 (12 V TVS) Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse stand-off voltage - - - 12 V (V) RWM Reverse breakdown voltage I = 1 mA 13.3 - - V (V) T BR Reverse leakage current V = V - - 1 I (A) R RWM R Clamping voltage I = 5 A, - 20 23 V (V) PP C t = 8/20 s p I = 12 A, - 23 26 PP t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - - 75 C (pF) R J V = V , f = 1 MHz - 45 - R RWM Pins 3, Pin 1 to Pin 2 (7 V TVS) Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse stand-off voltage - - - 7 V (V) RWM Reverse breakdown voltage I = 1 mA 7.5 - - V (V) T BR Reverse leakage current V = V - - 1 I (A) R RWM R Clamping voltage I = 5 A, - 12 15 V (V) PP C t = 8/20 s p I = 12 A, - 15 18 PP t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - - 75 C (pF) R J V = V , f = 1 MHz - 45 - R RWM 2 www.eaton.com/electronics