Technical Data 11145 Effective September 2020 STS32XXXXUXXX TVS Diode ESD suppressor Applications Cellular handsets and accessories Microprocessor based equipment Potable electronics Notebooks, desktops, and servers Portable instrumentation Power lines Peripherals Product features Environmental compliance and general 2000 Watts peak pulse power per line specifications t = 8/20 s p IEC61000-4-2 (ESD) Solid-state silicon-avalanche technology Up to 30 kV (air) Protects one uni-directional I/O line Up to 30 kV (contact) Low clamping voltage IEC61000-4-5 (Lightning) Up to 110 A (8/20 s) Low leakage current High surge capability HALOGEN Meets moisture sensitivity level (MSL) 3 HF Pb FREE Molding compound flammability rating: UL 94V-0 Termination finish: Tin Ordering part number ST S32 1 050 U 852 Family Package (S32- SOD-323) Number of channels (1) Operating voltage (050- 5 V) Bi/Uni directional (U- Uni) Capacitance (852- 850 pF) Pin out/functional diagramTechnical Data 11145 STS32XXXXUXXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STS32XXXXULXXX Peak pulse power dissipation on 8/20 s waveform P 2000 W pp ESD per IEC 61000-4-2 (Air) V +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STS321050U852 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5 V (V) RWM Reverse breakdown voltage I = 1 mA 6 7 8 V (V) t BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Clamping voltage I = 50 A, - 11 13 V (V) PP C t = 8/20 s p I = 110 A, - 14 17 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 850 1050 C (pF) RWM J STS321070U722 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 7 V (V) RWM Reverse breakdown voltage I = 1 mA 7.5 8 9 V (V) t BR Reverse leakage current V = 7 V - - 1 I (A) RWM R Clamping voltage I = 50 A, - 12 15 V (V) PP C t = 8/20 s p I = 100 A, - 15 18 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 720 900 C (pF) RWM J 2 www.eaton.com/electronics