Technical Data 11150 Effective September 2020 STS321XXXBXX0 TVS Diode ESD suppressor Applications Cellular handsets and accessories Microprocessor based equipment Portable electronics Notebooks, desktops, and servers Portable instrumentation Peripherals USB interface Product features Environmental compliance and general Protects one bi-directional I/O line specifications Low clamping voltage IEC61000-4-2 (ESD) Low leakage current Up to 30 kV (air) Meets moisture sensitivity level (MSL) 3 Up to 30 kV (contact) Molding compound flammability rating: IEC61000-4-5 (Lightning) Up to 20 A (8/20 s) UL 94V-0 Termination finish: Tin HALOGEN HF Pb FREE Ordering part number ST S32 1 033 B 100 Family Package (S32- SOD-323) Number of channels (1) Operating voltage (033- 3.3 V) Bi/Uni directional (B- Bi) Capacitance (100- 1.0 pF) Pin out/functional diagramTechnical Data 11150 STS321XXXBXX0 Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Peak pulse power dissipation on 8/20 s waveform P 350 W pp ESD per IEC 61000-4-2 (Air) V +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STS321033B100 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 3.6 - - V (V) T BR Reverse leakage current V = 3.3 V - - 0.1 I (A) RWM R Clamping voltage I = 1 A, - - 6.5 V (V) PP C t = 8/20 s p I = 10 A, - - 12 V (V) PP C t = 8/20 s p I = 20 A, - - 17.5 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 1.0 1.5 C (pF) RWM J STS321050B100 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - - V (V) T BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 9.8 V (V) PP C t = 8/20 s p I = 18 A, - - 20 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 1.0 1.5 C (pF) RWM J STS321080B100 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 8 V (V) RWM Reverse breakdown voltage I = 1 mA 8.5 - - V (V) T BR Reverse leakage current V = 8 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 13.5 V (V) PP C t = 8/20 s p I = 18 A, - - 23 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 1.0 1.5 C (pF) RWM J 2 www.eaton.com/electronics