Technical Data 11151 Effective September 2020 STS321XXXBXX1 TVS Diode ESD suppressor Applications Cellular handsets and accessories Microprocessor based equipment Poratble electronics Notebooks, desktops, and servers Portable instrumentation Peripherals Pagers Product features Environmental compliance and general 400 Watts peak pulse power per line specifications (t =8/20 s) P IEC61000-4-2 (ESD) Protects one bi-directional I/O line Up to 30 kV (air) Low clamping voltage Up to 30 kV (contact) Low leakage current IEC61000-4-5 (Lightning) Up to 22 A (8/20 s) Meets moisture sensitivity level (MSL) 3 HALOGEN Molding compound flammability rating: HF Pb UL 94V-0 FREE Termination finish: Tin Ordering part number ST S32 1 033 B 401 Family Package (S32- SOD-323) Number of channels (1-1) Operating voltage (033- 3.3 V) Bi/Uni directional (B- Bi) Capacitance (401- 40 pF) Pin out/functional diagramTechnical Data 11151 STS321XXXBXX1 Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Peak pulse power dissipation on 8/20 s waveform P 400 W pp ESD per IEC 61000-4-2 (Air) V +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STS321033B401 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 3.6 - - V (V) T BR Reverse leakage current V = 3.3 V - - 1 I (A) RWM R Clamping voltage I = 30 A, - - 15 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 40 60 C (pF) RWM J STS321050B331 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5 V (V) RWM Reverse breakdown voltage I = 1 mA 5.5 - - V (V) T BR Reverse leakage current V = 5 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 9 V (V) PP C t = 8/20 s p I = 22 A, - - 18 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 33 75 C (pF) RWM J STS321120B301 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 12 V (V) RWM Reverse breakdown voltage I = 1 mA 13.3 - - V (V) T BR Reverse leakage current V = 12 V - - 1 I (A) RWM R Clamping voltage I = 1 A, - - 19 V (V) PP C t = 8/20 s p I = 12 A, - - 33 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 30 45 C (pF) RWM J 2 www.eaton.com/electronics