STS521050U751 Eaton

Technical Data 11159 Effective September 2020 STS521XXXUXXX TVS Diode ESD suppressor Applications Cellular handsets and accessories Microprocessor based equipment Portable electronics Notebooks, desktops, and servers Portable instrumentation Peripherals Digital cameras Product features Environmental compliance and general Compact package size 0.063 x 0.032 specifications (1.6 mm x 0.8 mm) IEC61000-4-2 (ESD) Protects one uni-directional I/O line Up to 30 kV (air) Low clamping voltage Up to 30 kV (contact) Low leakage current IEC61000-4-5 (Lightning) Up to 15 A (8/20 s) Meets moisture sensitivity level (MSL) 3 Molding compound flammability rating: HALOGEN UL 94V-0 HF Pb FREE Termination finish: Tin Ordering part number ST S52 1 033 U 112 Family Package (S52 = SOD-523) Number of channels (1=1) Operating voltage (033 = 3.3 V) Bi/Uni directional (U=Uni) Capacitance (112 = 110 pF) Pin out/functional diagramTechnical Data 11159 STS521XXXUXXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STS521033 STS521050 STS521070 STS521120 STS521240 STS521360 U112 U751 U701 U351 U161 U201 Peak pulse power dissipation on 8/20 s waveform P 250 150 120 120 200 120 W pp ESD per IEC 61000-4-2 (Air) V +/-20 +/-30 +/-30 +/-15 +/-30 +/-25 kV ESD ESD per IEC 61000-4-2 (Contact) +/-15 +/-30 +/-30 +/-8 +/-30 +/-25 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STS521033U112 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 4.0 - - V (V) T BR Reverse leakage current V = 3.3V - 1 5 I (A) RWM R Clamping voltage I 15 A, - 15 - V (V) pp = C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 110 - C (pF) RWM J STS521050U751 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - 8.0 V (V) T BR Reverse leakage current V = 5.0 V - 0.01 0.1 I (A) RWM R Forward voltage I = 15 mA - 0.8 1.1 V (V) F F Peak pulse current t = 8/20 s - - 10 I (A) p PP Clamping voltage I 1 A, - 8.5 10 V (V) pp = C t = 8/20 s p I 10 A, - 12 15 V (V) pp = C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 75 100 C (pF) RWM J 2 www.eaton.com/electronics