Technical Data 11160 Effective September 2020 STSP84XXXXXX TVS Diode array ESD suppressor Applications WAN/LAN equipment Desktops, serves, notebooks & handhelds Switching systems Audio/video inputs 10/100/1000 ethernet Base stations Environmental compliance and general Product features specifications Protects four I/O lines IEC61000-4-2 (ESD) Low clamping voltage Up to 30 kV (air) Low operating voltage Up to 30 kV (contact) Meets moisture sensitivity level (MSL) 3 IEC61000-4-5 (Lightning) Up to 50 A (8/20 s) Molding compound flammability rating: UL 94V-0 HALOGEN Termination finish:Tin HF Pb FREE Ordering part number Pin out/functional diagram ST SP8 4 028 U 120 STSP84150B601 Family Package (SP8 = SOP-8) Number of channels (4-4) Operating voltage (028 = 2.8 V) Bi/Uni directional (U = uni) Capacitance (120 = 1.2 pF) STSP84028U120 STSP84033U800 STSP84028UL65 STSP84050U800Technical Data 11160 STSP84XXXXXX Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STSP84028 STSP84028 STSP84033 STSP84050 STSP84150 U120 UL65 U800 U800 B601 Peak pulse power dissipation on 8/20 s waveform P 1000 600 500 500 300 W pp ESD per IEC 61000-4-2 (Air) V +/-30 +/-30 +/-15 +/-15 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 +/-30 +/-8 +/-8 +/-8 Lead soldering temperature T +260 (10 seconds) C L Operating junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 C STG Electrical characteristics (+25 C) STSP84028U120 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 2.8 V (V) RWM Holding voltage I =10 mA 3.0 - - V h h Reverse leakage current V = 2.8 V - - 1 I (A) RWM R Clamping voltage I = 2 A, - - 5.5 V (V) pp C t = 8/20 s p I = 10 A, - - 10 V (V) pp C t = 8/20 s p I = 50 A, - - 18 V (V) pp C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 1.2 2.0 C (pF) RWM J STSP84028UL65 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 2.8 V (V) RWM Reverse breakdown voltage I =1 mA 3.0 - - V (V) T BR Reverse leakage current V = 2.8 V - 0.01 0.1 I (A) RWM R Clamping voltage I = 2 A, - - 7.6 V (V) pp C t = 8/20 s p I = 20 A, - 14 20 V (V) pp C t = 8/20 s p Junction capacitance V = 0V, f = 1 MHz - 0.65 1 C (pF) RWM J 2 www.eaton.com/electronics