X-On Electronics has gained recognition as a prominent supplier of MR3A16AMA35 MRAM across the USA, India, Europe, Australia, and various other global locations. MR3A16AMA35 MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

MR3A16AMA35 Everspin

MR3A16AMA35 electronic component of Everspin
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See Product Specifications
Part No.MR3A16AMA35
Manufacturer: Everspin
Category: MRAM
Description: MRAM
Datasheet: MR3A16AMA35 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
480: USD 26.334 ea
Line Total: USD 12640.32 
Availability - 0
MOQ: 480  Multiples: 480
Pack Size: 480
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 480
Multiples : 480
480 : USD 26.334

   
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We are delighted to provide the MR3A16AMA35 from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR3A16AMA35 and other electronic components in the MRAM category and beyond.

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MR3A16A 512K x 16 MRAM FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20 years at temperature RoHS-compliant small footprint BGA and TSOP2 package All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR3A16A is a 8,388,608-bit magnetoresistive random access memory RoHS (MRAM) device organized as 524,288 words of 16 bits. The MR3A16A offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protect- ed on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR3A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR3A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other nonvolatile RAM products. The MR3A16A provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 C), and industrial temperature (-40 to +85 C) operating temperature options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 3 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 12 5. MECHANICAL DRAWING.......................................................................... 13 6. REVISION HISTORY...................................................................................... 15 How to Reach Us.............................................................................................. 16 Copyright 2020 Everspin Technologies, Inc. 1 MR3A16A Rev. 1.1 03/2020MR3A16A 1. DEVICE PIN ASSIGNMENT Figure 1.0 Block Diagram OUTPUT G UPPER BYTE OUTPUT ENABLE ENABLE BUFFER LOWER BYTE OUTPUT ENABLE 9 UPPER A 18:0 ADDRESS 8 BYTE 10 ROW BUFFER COLUMN 19 OUTPUT DECODER 8 DECODER BUFFER SENSE CHIP E LOWER 16 AMPS 8 ENABLE BYTE 8 OUTPUT BUFFER 512 x 16 BUFFER BIT UPPER MEMORY 8 BYTE WRITE DQU 15:8 W 8 ARRAY WRITE ENABLE DRIVER FINAL BUFFER 16 WRITE 8 LOWER DRIVERS 8 BYTE DQL 7:0 WRITE DRIVER UB UB UPPER BYTE WRITE ENABLE BYTE ENABLE LB LB BUFFER LOWER BYTE WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable UB Upper Byte Enable LB Lower Byte Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2020 Everspin Technologies, Inc. 2 MR3A16A Rev. 1.1 03/2020

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
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