X-On Electronics has gained recognition as a prominent supplier of MR4A08BYS35 MRAM across the USA, India, Europe, Australia, and various other global locations. MR4A08BYS35 MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

MR4A08BYS35 Everspin

MR4A08BYS35 electronic component of Everspin
MR4A08BYS35 Everspin
MR4A08BYS35 MRAM
MR4A08BYS35  Semiconductors

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See Product Specifications
Part No. MR4A08BYS35
Manufacturer: Everspin
Category: MRAM
Description: MRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
Datasheet: MR4A08BYS35 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 37.444 ea
Line Total: USD 37.44 
Availability - 269
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
269
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 37.444
10 : USD 34.617
25 : USD 33.297
50 : USD 33.286
100 : USD 32.318
270 : USD 31.35
540 : USD 30.8
1080 : USD 30.613
2565 : USD 30.536

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MR4A08BYS35 from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR4A08BYS35 and other electronic components in the MRAM category and beyond.

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MR4A08B 2M x 8 MRAM Memory FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature RoHS-compliant small footprint BGA and TSOP2 packages All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A08B is a 16,777,216-bit magnetoresistive random access RoHS memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low- voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are com- patible with similar low-power SRAM products and other non-volatile RAM products. The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is of- fered with commercial (0 to +70 C) and industrial (-40 to +85 C) operating temperature range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 11 5. MECHANICAL DRAWING.......................................................................... 12 6. REVISION HISTORY...................................................................................... 14 How to Reach Us.......................................................................................... 15 Copyright 2018 Everspin Technologies 1 MR4A08B Rev. 8.7 3/2018MR4A08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 10 A 20:0 ADDRESS ROW BUFFER 11 COLUMN 21 DECODER DECODER CHIP E 8 OUTPUT 8 8 ENABLE SENSE BUFFER BUFFER AMPS 2M x 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies 2 MR4A08B Rev. 8 .7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
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