.040 NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch (mm) CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS ( 25C unless otherwise noted) A medium area high sensitivity NPN silicon Maximum Temperatures phototransistor in a recessed TO-106 ceramic package. Storage Temperature: -20C to 70C The chip is protected with a lens of clear epoxy. The base Operating Temperature: -20C to 70C connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of Continuous Power Dissipation: 100 mW PerkinElmer IREDs. Derate above 30C: 2.5 mW/C Maximum Current: 50 mA Lead Soldering Temperature: 260C (1.6 mm from case, 5 sec. max.) ELECTRO-OPTICAL CHARACTERISTICS 25C (See also typical curves, pages 91-92) Collector Emitter Saturation Light Current Dark Current Rise/Fall Time Breakdown Breakdown Voltage Angular l l V V V t /t C CEO BR(CEO) BR(ECO) CE(SAT) R F Response 1/2 Part Number l = 100 A l = 100 A l = 1.0 mA l = 1.0 mA C E C C mA H = 0 H H = 0 H = 0 H = 400 fc R = 100 L 2 fc (mW/cm ) (nA) V V = 5.0 V CE CE Min. Max. Volts, Min. Volts, Min. Volts, Max. sec, Typ. Typ. Max. (Volts) VTT9102 6.0 100 (5) 100 5 30 4.0 0.55 6.0 42 VTT9103 13.0 100 (5) 100 5 30 4.0 0.55 10.0 42 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 101X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for excelitas manufacturer: Other Similar products are found below : PYQ1048 LHI968 PYQ1348 LHI874 VTD205H VTB9413BH VTT1225H LHI944 LHI1128 VTB8441BH LHI 878 VTE3324LAH VTP1220FBH VTT7125H VTB6061H VTE7173H VTE1295H VTB9412BH VTB1013H VTP1232FH VTE1291W-2H VTP4085H VTE1291-2H VTP8651H VTD206KH VTD34FH VTD205KH VTB5041BH VTE1163H VTB5051JH VTS3082H VTB5051H