A Product Line of
Diodes Incorporated
VN10LP
60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET
Features Mechanical Data
BV > 60V Case: E-Line (TO-92 Compatible)
DSS
R 5 @ V = 10V Case Material: Molded Plastic, Green Molding Compound
DS(on) GS
I = 270mA Maximum Continuous Drain Current UL Flammability Rating 94V-0
D
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per
Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208
Qualified to AEC-Q101 Standards for High Reliability Weight: 0.159 grams (Approximate)
E-Line
Part Mark on
(TO-92 Compatible)
Rounded Face
Ejection Mark
D G S
on Flat Face
Bottom View
Pin-Out Configuration
Device Symbol
Flat Face View D
D G S G S
Rounded Face View
Ordering Information (Note 4)
Product Marking Package Leads Quantity
VN10LP VN10LP E-Line Straight 4,000 Loose in a Box
VN10LPSTZ VN10LP E-Line Joggled 2,000 Taped per Ammo Box
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
A Product Line of
Diodes Incorporated
VN10LP
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
Continuous Drain Current I 270 mA
D
Pulsed Drain Current I 3 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 625 mW
P
D
Thermal Resistance, Junction to Ambient (Note 5) 200 C/W
R
JA
Thermal Resistance, Junction to Leads (Note 6) 71 C/W
R
JL
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Notes: 5. For a through-hole device mounted on the minimum recommended pad layout with 12mm lead length from the bottom of package to the single-sided
FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the drain lead).
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage 60 V
BV I = 250A, V = 0V
DSS D GS
Zero Gate Voltage Drain Current I 10 A V = 60V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS
On state Drain Current (Note 7) I 750 mA V =15 V, V =10V
D(on) DS GS
Gate Threshold Voltage V 0.8 2.5 V I = 1mA, V = V
GS(th) D DS GS
5.0 V = 10V, I = 500mA
GS D
Static Drain-Source On-Resistance (Note 7)
R
DS (ON)
7.5 V = 5V, I = 200mA
GS D
Forward Transconductance (Notes 7 & 9) 100 mS
g V = 15V, I = 500mA
fs DS D
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 60
C
iss
V = 25V, V = 0V
DS GS
Output Capacitance 25 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 5
C
rss
Turn-On Time (Note 8) t 10
(on)
ns
VDD = 15V, ID = 600mA
Turn-Off Time (Note 8) t 10
(off)
Notes: 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.
8. Switching characteristics are independent of operating junction temperature. Switching times are measured with 50ohm source impedance and
<5ns rise time on a pulse generator.
9. For design aid only, not subject to production testing.
2 of 5
VN10LP December 2014
Diodes Incorporated
www.diodes.com
Document Number DS33198 Rev. 4 - 2