2N6714 2N6715 NPN 2N6726 2N6727 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary silicon plastic power transistors designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-237 CASE 2N6714 2N6715 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6726 2N6727 UNITS A Collector-Base Voltage V 40 50 V CBO Collector-Emitter Voltage V 30 40 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 1.0 W D Power Dissipation (T=25C) P 2.0 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 125 C/W JA Thermal Resistance 62.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 0.1 A CBO CB CBO I V=5.0V 0.1 A EBO EB BV I =1.0mA, (2N6714, 2N6726) 40 V CBO C BV I =1.0mA, (2N6715, 2N6727) 50 V CBO C BV I =10mA, (2N6714, 2N6726) 30 V CEO C BV I =10mA, (2N6715, 2N6727) 40 V CEO C BV I=1.0mA 5.0 V EBO E V I =1.0A, I=0.1A 0.5 V CE(SAT) C B V V =1.0V, I=1.0A 1.2 V BE(ON) CE C h V =1.0V, I=0.1A 60 FE CE C h V =1.0V, I=1.0A 50 250 FE CE C f V =10V, I =50mA, f=20MHz 50 500 MHz T CE C C V =10V, I =0, f=1.0MHz 30 pF ob CB E R1 (31-July 2012)2N6714 2N6715 NPN 2N6726 2N6727 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-237 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (31-July 2012) www.centralsemi.com