X-On Electronics has gained recognition as a prominent supplier of AD500-1.3G-TO5 Photodiodes across the USA, India, Europe, Australia, and various other global locations. AD500-1.3G-TO5 Photodiodes are a product manufactured by First Sensor. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

AD500-1.3G-TO5 First Sensor

AD500-1.3G-TO5 electronic component of First Sensor
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Part No.AD500-1.3G-TO5
Manufacturer: First Sensor
Category: Photodiodes
Description: Photodiodes High Speed Si APD w/1.3Ghz Amplifier
Datasheet: AD500-1.3G-TO5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 260.381 ea
Line Total: USD 26038.1 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 100
Multiples : 100
100 : USD 260.381

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Type
Width
Brand
Noise Equivalent Power - Nep
Pd - Power Dissipation
Photocurrent
Responsivity
Factory Pack Quantity :
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We are delighted to provide the AD500-1.3G-TO5 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AD500-1.3G-TO5 and other electronic components in the Photodiodes category and beyond.

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First Sensor APD Hybrid Series Data Sheet Part Description AD500-8-1.3G TO5 Order 5000072 PIN 5 2.2 CASE/ GND PIN 1 0.46 V out+ 5 PL 9.2 PIN 2 6.60 113 VCC VIEWING 8.3 ANGLE PIN 4 5.08 V out- PIN CIRCLE 4.2 1 PIN 3 7.6 MIN +V BIAS 5 PL BACKSIDE VIEW 1.00 SQ 2 ACTIVE AREA: 0.196 mm (500 m DIAMETER) CHIP DIMENSIONS Features Description Applications RoHS 0.500 mm active area The AD500-8-1.3G-TO5 is an Avalanche Photodiode Amplifier Precision photometry 2011/65/EU 2 Hybrid containing a 0.196 mm active area APD chip integrated Low noise Analytical instruments with an internal 1.3 GHz amplifier. Hermetically packaged in a High gain Medical equipment TO-5 with a borosilicate glass window cap. Long term stability Low light sensor Absolute maximum ratings Spectral response M = 100 Symbol Parameter Min Max Units TSTG Storage Temp -55 +125 C 60 TOP Operating Temp 0 +60 C 50 T Soldering Temp - +240 C SOLDERING P Power Dissipation - 360 mW 40 Vcc Single Supply Voltage +3.0 +5.5 V 30 Icc Supply Current - 63 mA 20 SCHEMATIC 10 V (+5V) CC PIN 2 0 C1 OUT+ 400 500 600 700 800 900 1000 1100 PIN 1 AD230-8 OUT- WAVELENGTH (nm) PIN 4 PIN 5 C2 CASE/GND PIN 3 +V BIAS Electro-optical Characteristics 22 C (VCC = single supply +3.3V, RL = 100W unless otherwise specified) Symbol Characteristic Test Condition Min Typ Max Units Frequency Response -3dB 800 nm --- 1.3 --- GHz -3dB S Sensitivity* = 800 nm M = 100 --- 100 --- KV/W Icc Supply Current Dark state --- 34 63 mA * Sensitivity = APD responsivity (0.45 A/W X 100 gain) x TIA gain (2.5K) These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling. Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 RESPONSIVITY (A/W) Avalanche photodiode data 22 C Symbol Characteristics Test-Condition Min Typ Max Unit ID Dark Current M = 100 (see note 1) --- 0.5 2.0 nA C Capacitance M = 100 (see note 1) --- 2.2 --- pF V Breakdown Voltage I = 2 A 80 --- 120 V BR D Temperature Coefficient of VBR 0.35 0.45 0.55 V/K Responsivity M = 100 = 0 V = 800 nm 45 50 --- A/W Bandwidth -3dB --- 1.0 --- GHz 3dB t Rise Time --- 350 --- ps r Optimum Gain 50 60 --- Excess Noise factor M = 100 --- 2.2 --- --- --- Excess Noise index M = 100 0.2 1/2 --- --- Noise Current M = 100 1.0 pA/Hz Max Gain 200 --- --- -14 1/2 --- --- NEP Noise Equivalent Power M = 100 = 800 nm 2.0 X 10 W/Hz Note 1: Measurement conditions: Setup of photo current 1.0 nA at M = 1 and irradiated by a 680 nm, 60 nm bandwidth LED. Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage. Transimpedance amplifier data 25 C (Vcc = +3.0 V to +5.5 V, TA = 0C to 70C, 100 load between OUT+ and OUT-. Typical values are at TA = 25C, Vcc = +3.3 V) Parameter Test-Condition Min Typ Max Unit Supply Voltage 3 5 6 V Supply Current --- 34 63 mA 2.10 3.40 Transimpedance Differential, measured with 40 A p-p signal 2.75 K Output impedance Single ended per side 48 50 52 Maximum Differential Output Voltage Input = 1 mA p-p 220 380 575 mV p-p AC Input Overload 2 --- --- mA p-p DC Input Overload 1 --- --- mA Input Referred RMS Noise TO-5 package, see note 3 --- 490 668 nA 1/2 --- --- Input Referred Noise Density See note 3 11 pA/Hz Small signal bandwidth Source capacitance = 0.85 pF, see note 2 1.525 2.00 --- GHz --- --- Low Frequency Cutoff -3 dB, input < 20 A DC 30 KHz --- Transimpedance Linear Range Gain at 40 A p-p is within 5% of the small signal gain 40 --- A p-p Power Supply Rejection Ratio (PSRR) Output referred, f < 2 MHz, PSSR = -20 Log (Vout / Vcc) --- 50 --- dB Note 2: Source capacitance for AD500-8-1.3G-TO5 is the capacitance of APD. Note 3: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/bandwidth. TRANSFER CHARACTERISTICS The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal. 2 2 The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as Amps/mm /Watts/mm , where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APDs corresponding responsivity is 0.4 A/W. -6 If energy in = 1 W, then the current from the APD = (0.4 A/W) x (1 x 10 W) = 0.4 A. We can then factor in the typical gain of the APD of 100, making the input current to the amplifier 40 A. From Fig. 5 we can see the amplifier output will be approximately 75 mV p-p. APPLICATION NOTES The AD500-8-1.3G-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode. This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-200 V) for the APD. The internal APD follows the gain curve published for the AD500-8-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200 millivolts differential. In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm. When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise. Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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