APD Hybrid Series Data Sheet Part Description AD500-9-8015 TO52 US Order 05-100 International Order 5000041 PIN 5 PIN 1 2.95 CASE/GND V CC 2.1 0.46 PIN 2 VOUT+ 5 PL 5.40 45 4.70 AD 500 2.0 MIN PIN 4 V 2.54 OUT- 1 12.7 PIN CIRCLE PIN 3 5 PL +V BIAS 1.00 SQ 2 ACTIVE AREA: 0.196 mm BACKSIDE VIEW (500 m DIAMETER) CHIP DIMENSIONS Features Description Applications RoHS 0.500 mm active area The AD500-9-8015 TO52 is an Avalanche Photodiode Amplifier Precision photometry 2011/65/EU 2 Low noise Hybrid containing a 0.196 mm active area APD chip integrated Analytical instruments High gain with an internal transimpedance amplifier. Hermetically Medical equipment Long term stability packaged in a TO-52 with a flat borosilicate glass window cap. Low light sensor Absolute maximum ratings Spectral response M = 100 Symbol Parameter Min Max Unit TSTG Storage Temp -55 +125 C T Operating Temp 0 +60 C 70 OP TSOLDERING Soldering Temp - +240 C 60 P Power Dissipation - 360 mW 50 V Single Supply Voltage +4.5 +11 V cc 40 Icc Supply Current - 26 mA 30 Schematic 20 V (+5V) 10 CC PIN 1 0 C1 OUT+ 400 500 600 700 800 900 1000 1100 PIN 2 WAVELENGTH (nm) AD500-9 OUT- PIN 4 PIN 5 C2 CASE/GND PIN 3 +VBIAS Electro-optical characteristics 23 C (V = single supply +5V, R = 50W unless otherwise specified) CC L Symbol Characteristic Test-Condition Min Typ Max Unit Frequency Response -3dB 905 nm --- 100 --- MHz -3dB S Sensitivity* = 905 nm M = 100 --- 1160 --- KV/W Icc Supply Current Dark state --- 25 26 mA * Sensitivity = APD responsivity (0.58 A/W X 100 gain) x TIA gain (20 K) These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling. Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 RESPONSIVITY (A/W) Avalanche photodiode data 23 C Symbol Characteristic Test-Condition Min Typ Max Unit I Dark Current M = 100 (see note 1) --- 0.5 5.0 nA D C Capacitance M = 100 (see note 1) --- 1.2 --- pF VBR Breakdown Voltage ID = 2 A 160 200 --- V Temperature Coefficient of V --- 1.55 --- V/K BR 55 --- Responsivity M = 100 = 0 V = 905 nm 60 A/W Bandwidth -3dB --- 0.5 --- GHz 3dB tr Rise Time M = 100 --- 550 --- ps Optimum Gain 50 60 --- --- --- Excess Noise factor M = 100 2.5 --- --- Excess Noise index M = 100 0.2 1/2 Noise Current M = 100 --- 1.0 --- pA/Hz --- Max Gain 200 --- -14 1/2 --- --- NEP Noise Equivalent Power M = 100 = 905 nm 2.0 X 10 W/Hz Note 1: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. Transimpedance amplifier data 25 C (Vcc = +4.5 V to +11V, TA = 0C to 70C, 50 load between OUT+ and OUT-. Typical values are at TA = 25C, Vcc = +5 V) Parameter Test-Condition Min Typ Max Unit Supply Voltage +4.5 +5 +11 V Supply Current --- 25 26 mA Transimpedance Differential, measured with 40 A p-p signal 16 20 24 K Output impedance Single ended per side 40 50 60 Maximum Differential Output Voltage Input = 2 mA p-p with 50 differential termination --- 600 --- mV p-p Input Referred RMS Noise TO-5 package, see note 3 --- 26.5 --- nA 1/2 --- --- Input Referred Noise Density See note 3 3.0 pA/Hz --- Small signal bandwidth Source capacitance = 1.2 pF, see note 2 180 240 MHz Low Frequency Cutoff -3 dB, input < 20 A DC --- 5 --- KHz --- Transimpedance Linear Range Peak to peak 0.95 < linearity < 1.05 25 30 A p-p Power Supply Rejection Ratio (PSRR) --- 40 --- dB Note 2: Source capacitance for AD500-9-8015-TO52 is the capacitance of APD. Note 3: Input referred noise is calculated as RMS output noise/ (gain at f = 100 Mhz). Noise density is (input referred noise)/bandwidth. TRANSFER CHARACTERISTICS The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal. 2 2 The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as Amps/mm /Watts/mm , where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APDs corresponding responsivity is 0.4 A/W. -6 If energy in = 1 W, then the current from the APD = (0.4 A/W) x (1 x 10 W) = 0.4 A. We can then factor in the typical gain of the APD of 100, making the input current to the amplifier 40 A. APPLICATION NOTES The AD500-9-8015-TO52 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode. This detector requires +4.5 V to +11 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200 millivolts differential. In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm. When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise. Rev. 14/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3