X-On Electronics has gained recognition as a prominent supplier of MB85R4002ANC-GE1 F-RAM across the USA, India, Europe, Australia, and various other global locations. MB85R4002ANC-GE1 F-RAM are a product manufactured by Fujitsu. We provide cost-effective solutions for F-RAM, ensuring timely deliveries around the world.

MB85R4002ANC-GE1 Fujitsu

MB85R4002ANC-GE1 electronic component of Fujitsu
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Part No.MB85R4002ANC-GE1
Manufacturer: Fujitsu
Category: F-RAM
Description: FRAM, 4MBIT, 120NS, TSOP-48
Datasheet: MB85R4002ANC-GE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 40.9988 ea
Line Total: USD 41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 40.9988

   
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We are delighted to provide the MB85R4002ANC-GE1 from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MB85R4002ANC-GE1 and other electronic components in the F-RAM category and beyond.

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FUJITSU SEMICONDUCTOR DS501-00006-3v1-E DATA SHEET Memory FRAM 4 M Bit (256 K 16) MB85R4002A DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. 10 The memory cells used in the MB85R4002A can be used for 10 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. FEATURES Bit configuration : 262,144 words 16 bits LB and UB data byte control 10 Read/write endurance : 10 times / byte Data retention : 10 years ( + 55 C), 55 years ( + 35 C) Operating power supply voltage : 3.0 V to 3.6 V Low power operation : Operating power supply current 15 mA (Typ) Standby current 50 A (Typ) Operation ambient temperature range : 40 C to + 85 C Package : 48-pin plastic TSOP (FPT-48P-M48) RoHS compliant Copyright2011-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2013.4MB85R4002A PIN ASSIGNMENTS (TOP VIEW) 1 A15 48 A16 A14 2 47 NC A13 3 46 VSS A12 4 45 I/O16 A11 5 44 I/O8 6 A10 43 I/O15 7 A9 42 I/O7 A8 8 41 I/O14 NC 9 40 I/O6 DNU 10 39 I/O13 WE 11 38 I/O5 CE2 12 37 VDD 13 VSS 36 I/O12 UB 14 35 I/O4 LB 15 34 I/O11 VDD 16 33 I/O3 A17 17 32 I/O10 A7 18 31 I/O2 19 A6 30 I/O9 A5 20 29 I/O1 A4 21 28 OE A3 22 27 VSS A2 23 26 CE1 A1 24 25 A0 (FPT-48P-M48) PIN DESCRIPTIONS Pin Number Pin Name Functional Description 1 to 8, 17 to 25, 48 A0 to A17 Address Input pins 29 to 36, 38 to 45 I/O1 to I/O16 Data Input/Output pins 26 CE1 Chip Enable 1 Input pin 12 CE2 Chip Enable 2 Input pin 11 WE Write Enable Input pin 28 OE Output Enable Input pin 14, 15 LB, UB Data Byte Control Input pins Supply Voltage pins 16, 37 VDD Connect all two pins to the power supply. Ground pins 13, 27, 46 VSS Connect all three pins to ground. No Connect pins 9, 47 NC Leave these pins open, or connect to VDD or VSS. Do Not Use pin 10 DNU Make sure to connect this pin to VDD. 2 DS501-00006-3v1-E

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Fujitsu Components America, Inc.
Fujitsu Electronics America, Inc.
FUJITSU-TAKAMISAWA
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