FUJITSU SEMICONDUCTOR MEMORY SOLUTION ATA SHEET DS501-00022-7v1-E Memory FRAM 1M (128 K 8) Bit SPI MB85RS1MT DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS1MT adopts the Serial Peripheral Interface (SPI). The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM. 13 The memory cells used in the MB85RS1MT can be used for 10 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. 2 MB85RS1MT does not take long time to write data like Flash memories or E PROM, and MB85RS1MT takes no wait time. FEATURES Bit configuration : 131,072 words 8 bits Serial Peripheral Interface : SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max) 2.7 V to 3.6 V, 30 MHz (Max) For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max) 13 High endurance : 10 times / byte Data retention : 10 years (+85 C), 95 years ( 55 C), over 200 years ( 35 C) Operating power supply voltage : 1.8 V to 3.6 V Low power consumption : Operating powe r supply current 9.5 mA (Max 30 MHz) Standby current 120 A (Max) Sleep current 10 A (Max) Operation ambient temperature range : -40 C to +85 C Package : 8-pin plastic SOP 150mil 8-pin plastic DFN 5mm 6mm RoHS compliant Copyright 2020 FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED 2020.07MB85RS1MT PIN ASSIGNMENT (TOP VIEW) (TOP VIEW) CS 1 8 VDD 1 8 CS VDD 2 7 SO HOLD HOLD SO 2 7 DIE PAD SCK 3 6 WP 3 6 WP SCK 4 5 VSS SI VSS 4 5 SI (8-pin plastic SOP 150mil) (8-pin plastic DFN 5mm 6mm) 2 DS501-00022-7v1-E