1N5829 thru 1N5831R
V = 20 V - 40 V
RRM
Silicon Power
I = 25 A
F
Schottky Diode
Features
High Surge Capability DO-4 Package
Types up to 40V V
RRM
Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R) Unit
Repetitive peak reverse voltage V 20 25 35 V
RRM
V 14 17 25
RMS reverse voltage V
RMS
DCDC blockingblocking vvoltageoltage VV 2020 2525 3535 VV
DCDC
I T 100 C
Continuous forward current 25 25 25 A
F C
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms
800 800 800 A
F,SM C p
current, Half Sine Wave
Operating temperature T -55 to 150 -55 to 150 -55 to 150 C
j
T -55 to 150 -55 to 150 -55 to 150
Storage temperature C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R)
Parameter Symbol Unit
V I = 25 A, T = 25 C 0.58 0.58 0.58 V
Diode forward voltage F F j
V = 20 V, T = 25 C 2 22
R j
I
Reverse current mA
R
V = 20 V, T = 125 C 250 250 250
R j
Thermal characteristics
Thermal resistance, junction -
R 1.8 1.8 1.8
C/W
thJC
case
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/1N5829 thru 1N5831R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/