FR12K05 thru FR12MR05 V = 800 V - 1000 V RRM Silicon Fast I = 12 A F Recovery Diode Features High Surge Capability DO-4 Package Types from 800 V to 1000 V V RRM Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions FR12K(R)05 FR12M(R)05 Unit Repetitive peak reverse V 800 1000 V RRM voltage V 700 RMS reverse voltage 560 V RMS DC blocking voltage V 800 1000 V DC T 100 C Continuous forward current I 12 12 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 180 180 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions FR12M(R)05 Parameter Symbol FR12K(R)05 Unit V I = 12 A, T = 25 C 0.8 V Diode forward voltage F F j 0.8 V = 100 V, T = 25 C 25 R j 25 A I Reverse current R V = 100 V, T = 150 C 6 6 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 500 500 nS RR time I = 0.25 A RR Thermal characteristics Thermal resistance, junction R 2.0 2.0 C/W thJC - case 1 Oct. 2018 A C C A Stud Stud (R) FR12K05 thru FR12MR05 2 Oct. 2018