FR85DR02 GeneSiC Semiconductor

FR85B02 thru FR85JR02 V = 100 V - 600 V RRM Silicon Fast I = 85 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 100 V to 600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. C A Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions FR85B(R)02 FR85D(R)02 FR85G(R)02 FR85J(R)02 Unit Repetitive peak reverse V 100 200 400 600 V RRM voltage V 420 RMS reverse voltage 70 140 280 V RMS DC blocking voltage V 100 200 400 600 V DC T 100 C Continuous forward current I 85 85 85 85 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1369 1369 1369 1369 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions FR85J(R)02 Parameter Symbol FR85B(R)02 FR85D(R)02 FR85G(R)02 Unit V I = 85 A, T = 25 C 1.3 V Diode forward voltage F F j 1.3 1.3 1.3 V = 100 V, T = 25 C 25 R j 25 25 25 A I Reverse current R V = 100 V, T = 125 C 20 20 20 20 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 250 200 200 200 nS RR time I = 0.25 A RR 1 Oct. 2018 A C A C Stud Stud (R) FR85B02 thru FR85JR02 2 Oct. 2018