X-On Electronics has gained recognition as a prominent supplier of GA100SBJT12-FR4 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. GA100SBJT12-FR4 Discrete Semiconductor Modules are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

GA100SBJT12-FR4 GeneSiC Semiconductor

GA100SBJT12-FR4 electronic component of GeneSiC Semiconductor
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Part No.GA100SBJT12-FR4
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Modules
Description: GeneSiC Double Pulse Switching Test Board
Datasheet: GA100SBJT12-FR4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the GA100SBJT12-FR4 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GA100SBJT12-FR4 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Double Pulse Switching Board GA100SBJT12-FR4 Double Pulse Switching Board V = 1200 V DS, MAX I = 100 A D, MAX Features Compatible 1200 V, 100 A Testing SiC Junction Transistors (SJT) Low Series Inductance Design SiC MOSFETS Wide, 6 oz. Copper Current Traces Silicon Power MOSFETs Multiple DUT and FWD Connections for Durability Fast Silicon IGBTs Low Resistance and Inductance Gate Drive Connection Electrical Characteristics Parameter Symbol Conditions Value Unit Notes Test Voltage Maximum V 1200 V DS, MAX Drain Current Maximum I 100 A D, MAX Capacitor Bank C 5.0 F bank V = 800 V, I = 6 A Parasitic Inductance L DS D 60 nH s Maximum Stored Energy E V = 1200 V 3.6 J max DS Overview The GeneSiC Double Pulse Test Board is designed for performing switching tests on a wide variety of silicon and SiC power transistors. It is designed using low ESL capacitors and PCB traces to have a low parasitic series inductance (L ) current path. This allows recorded data S to be most representative of the device under test (DUT) and minimize testing circuit distortions. The board is capable of up to 1200 V and 100 A. User-provided external load inductor, DUT, and free-wheeling diode (FWD) may be soldered directly to the board, without testing sockets, for the lowest possible contact resistance and inductance. A gate drive circuit board may be mounted directly on to the Test Board for a short, low inductance path to the DUT gate pin connection. Figure 1: Double Pulse Test Board Figure 2: GeneSiC Semiconductor Switching Test Board Schematic Sept. 2015 Double Pulse Switching Board GA100SBJT12-FR4 MHV Voltage Conn. Voltage Balancing 5 F Capacitor Bank + Drain Current External FWD Sensor Conn. Load Inductor Connection Gate Drive DUT Conn. Figure 3: Switching Test Board with Labeling MHV Voltage Connection High voltage for testing up to 1200 V is supplied to the Test Board through a MHV coaxial connection. Voltage may be generated through a high voltage power supply. Capacitor Bank The capacitor bank is comprised of 20, 1 F, 630 V capacitors to store up to 3.6 J of energy to supply to the DUT. The bank includes 10 low effective series inductance (ESL) surface mount ceramic capacitors to allow DUT drain currents to rise and fall with minimal circuit interference. Copper traces of 6 oz. thickness on the Test Board also minimize parasitic inductance. Voltage Balancing Network A voltage balancing network of two 1 M , 2 W SMD resistors is used to ensure an equal potential is across the series connected capacitors on the Test Board along with two blocking rectifiers to protect against extreme overvoltage of the energy storage capacitors. External Load Inductor A load inductor (not provided) can be soldered directed to the HV and Drain nodes on their provided connection pads. Care should be taken to ensure the voltage rating of the inductor is not exceeded. Also, if the chosen inductor value is too large the capacitor bank may discharge before the inductor is fully charged to the desired test current I level during double pulse testing. An inductance of L 1.0 mH is suggested. D load Device Under Test (DUT) and Free Wheeling Diode (FWD) The DUT and FWD should be soldered into the connection terminals with minimal extra lead length. Leads extending through the Test Board should be trimmed from the package to reduce electrical noise which may distort measurement during ultra-fast, high-voltage switching. Devices may be connected to isolated hotplates while connected to the Test Board for high-temperature testing as desired. It is also recommended to probe any device voltages (i.e. V , V ) as close as possible to the device for accurate measurement and minimal testing GS DS induced voltage and current ringing. Sept. 2015

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
GENESIC SEMICONDUCTOR INC.
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