Non-Isolated Gate Driver GA15IDDJT22-FR4
Gate Driver for SiC Junction
V = 5000 V
ISO,SIG
Transistors with Signal Isolation
P = 27 W
DRIVE
f = 350 kHz
max
Features Product Image
Requires single 12 V voltage supply
Pin Out compatible with MOSFET driver boards
Multiple internal voltage level topology for low drive losses
Point-of-load (POL), non-isolated design
5000 V Signal Isolation (up to 10 s)
Capable of high gate currents with 27 W maximum power
RoHS Compliant
Section I: Introduction
The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 m SiC Junction Transistors (SJT) and Co-Packs. The board
utilizes DC/DC converters and FOD3182 signal opto-isolation as well as totem-pole gate driver ICs, providing fast switching and customizable
continuous gate currents necessary for any SJT device. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC
MOSFET gate drive solutions.
Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram
Section II: Compatibility with SiC Junction Transistors
The GA15IDDJT22-FR4 has a pre-installed gate resistance (R ) of 0.7 on-board which may be modified by the user for safe operation of
G
certain SJT parts. Please see the table below and Section VI for more information.
Table 1: GA15IDDJT22-FR4 SJT Compatibility Information Table
SJT/Co-Pack Part Number Compatible Notes
GA03JT12-247 Yes Driver GA03IDDJT30-FR4 Recommended
GA05JT12-247/263 Driver GA03IDDJT30-FR4 Recommended
Yes
GA06JT12-247 Driver GA03IDDJT30-FR4 Recommended
Yes
GA10JT12-247/263 Yes Driver GA03IDDJT30-FR4 Recommended
GA20JT12-247/263 Driver GA03IDDJT30-FR4 Recommended
Yes
GA50JT12-247
Yes
GA100JT12-227
Yes Reduction of RG values recommended (Section VI)
GA04JT17-247 Yes Driver GA03IDDJT30-FR4 Recommended
GA16JT17-247 Driver GA03IDDJT30-FR4 Recommended
Yes
GA50JT17-247
Yes
GA100JT17-227 Yes Reduction of RG values recommended (Section VI)
GA50SICP12-227
Yes
GA100SICP12-227
Yes Reduction of RG values recommended (Section VI)
Oct. 2015
Non-Isolated Gate Driver GA15IDDJT22-FR4
Section III: Operational Characteristics
Value
Parameter Symbol Conditions Unit Notes
Min. Typical Max.
Input Supply Voltage V V High, V Low
CC CC CC 10.8 12 13.2 V
Input Signal Voltage, Off V
sig, OFF -5 0 0.8 V
Input Signal Voltage, On V
sig, ON 3.2 5.0 6.4 V
Input Signal Current, On I 20 36 50 mA
sig, ON
Propagation Delay, Signal Turn On t
d,ON 200 320 ns
Propagation Delay, Signal Turn Off t
d,OFF 230 325 ns
Output Gate Current, Peak I 7 15 A
G,ON
Output Gate Current, Continuous I f < 350 kHz 2.0 5 A
G,steady
Output Gate Voltage Rise Time t C = 50 nF
r load 40 70 ns
C = 50 nF
Output Gate Voltage Fall Time t load 25 60 ns
f
Dependant on user installed CG values
Operating Frequency f 350 kHz
sw
Power Dissipation P 25.0 W (V ) + 2.0 W (V + V ) 27.0 W
tot GL GH EE
SJT Drain Source Voltage V On driven power transistor 1700 V
DS
Isolation Voltage, Signal V 5000 V
ISO-SIG
Storage Temperature T -55 100 C
Product Weight 40 g
Section IV: Pin Out Description
Source
VCC Low RTN
Source
VCC Low
Source
Signal RTN
Signal
Gate
VCC High RTN
Gate
VCC High
Gate
Figure 2: Gate Drive Board Top View
Table 2: GA15IDDJT22-FR4 Pin Out Connections
Header Pin Label Suggested Connection
JP1 VCC High + 12 V, > 30 W Supply
JP1 VCC High RTN Analog Ground
JP1 Signal Gate Drive Control Signal
JP1 Signal RTN Analog Ground
JP1 VCC Low + 12 V, > 30 W Supply
JP1 VCC Low RTN Analog Ground
Gate Gate SJT Gate Pin
Gate Gate SJT Gate Pin
Gate Gate SJT Gate Pin
Source Source SJT Source/GR Pin
Source Source SJT Source/GR Pin
Source Source SJT Source/GR Pin
Oct. 2015