X-On Electronics has gained recognition as a prominent supplier of GA15IDDJT22-FR4 Gate Drivers across the USA, India, Europe, Australia, and various other global locations. GA15IDDJT22-FR4 Gate Drivers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Gate Drivers, ensuring timely deliveries around the world.

GA15IDDJT22-FR4 GeneSiC Semiconductor

GA15IDDJT22-FR4 electronic component of GeneSiC Semiconductor
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Part No.GA15IDDJT22-FR4
Manufacturer: GeneSiC Semiconductor
Category: Gate Drivers
Description: GeneSiC Gate Driver Circuit Board
Datasheet: GA15IDDJT22-FR4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1 : USD 149.0309
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We are delighted to provide the GA15IDDJT22-FR4 from our Gate Drivers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GA15IDDJT22-FR4 and other electronic components in the Gate Drivers category and beyond.

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Non-Isolated Gate Driver GA15IDDJT22-FR4 Gate Driver for SiC Junction V = 5000 V ISO,SIG Transistors with Signal Isolation P = 27 W DRIVE f = 350 kHz max Features Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards Multiple internal voltage level topology for low drive losses Point-of-load (POL), non-isolated design 5000 V Signal Isolation (up to 10 s) Capable of high gate currents with 27 W maximum power RoHS Compliant Section I: Introduction The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 m SiC Junction Transistors (SJT) and Co-Packs. The board utilizes DC/DC converters and FOD3182 signal opto-isolation as well as totem-pole gate driver ICs, providing fast switching and customizable continuous gate currents necessary for any SJT device. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC MOSFET gate drive solutions. Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram Section II: Compatibility with SiC Junction Transistors The GA15IDDJT22-FR4 has a pre-installed gate resistance (R ) of 0.7 on-board which may be modified by the user for safe operation of G certain SJT parts. Please see the table below and Section VI for more information. Table 1: GA15IDDJT22-FR4 SJT Compatibility Information Table SJT/Co-Pack Part Number Compatible Notes GA03JT12-247 Yes Driver GA03IDDJT30-FR4 Recommended GA05JT12-247/263 Driver GA03IDDJT30-FR4 Recommended Yes GA06JT12-247 Driver GA03IDDJT30-FR4 Recommended Yes GA10JT12-247/263 Yes Driver GA03IDDJT30-FR4 Recommended GA20JT12-247/263 Driver GA03IDDJT30-FR4 Recommended Yes GA50JT12-247 Yes GA100JT12-227 Yes Reduction of RG values recommended (Section VI) GA04JT17-247 Yes Driver GA03IDDJT30-FR4 Recommended GA16JT17-247 Driver GA03IDDJT30-FR4 Recommended Yes GA50JT17-247 Yes GA100JT17-227 Yes Reduction of RG values recommended (Section VI) GA50SICP12-227 Yes GA100SICP12-227 Yes Reduction of RG values recommended (Section VI) Oct. 2015 Non-Isolated Gate Driver GA15IDDJT22-FR4 Section III: Operational Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. Input Supply Voltage V V High, V Low CC CC CC 10.8 12 13.2 V Input Signal Voltage, Off V sig, OFF -5 0 0.8 V Input Signal Voltage, On V sig, ON 3.2 5.0 6.4 V Input Signal Current, On I 20 36 50 mA sig, ON Propagation Delay, Signal Turn On t d,ON 200 320 ns Propagation Delay, Signal Turn Off t d,OFF 230 325 ns Output Gate Current, Peak I 7 15 A G,ON Output Gate Current, Continuous I f < 350 kHz 2.0 5 A G,steady Output Gate Voltage Rise Time t C = 50 nF r load 40 70 ns C = 50 nF Output Gate Voltage Fall Time t load 25 60 ns f Dependant on user installed CG values Operating Frequency f 350 kHz sw Power Dissipation P 25.0 W (V ) + 2.0 W (V + V ) 27.0 W tot GL GH EE SJT Drain Source Voltage V On driven power transistor 1700 V DS Isolation Voltage, Signal V 5000 V ISO-SIG Storage Temperature T -55 100 C Product Weight 40 g Section IV: Pin Out Description Source VCC Low RTN Source VCC Low Source Signal RTN Signal Gate VCC High RTN Gate VCC High Gate Figure 2: Gate Drive Board Top View Table 2: GA15IDDJT22-FR4 Pin Out Connections Header Pin Label Suggested Connection JP1 VCC High + 12 V, > 30 W Supply JP1 VCC High RTN Analog Ground JP1 Signal Gate Drive Control Signal JP1 Signal RTN Analog Ground JP1 VCC Low + 12 V, > 30 W Supply JP1 VCC Low RTN Analog Ground Gate Gate SJT Gate Pin Gate Gate SJT Gate Pin Gate Gate SJT Gate Pin Source Source SJT Source/GR Pin Source Source SJT Source/GR Pin Source Source SJT Source/GR Pin Oct. 2015

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
GENESIC SEMICONDUCTOR INC.
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