MBR200100CTS GeneSiC Semiconductor

MBR20045CT thru MBR200100CTR V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 45 V to 100 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBR20080CT(R) MBR200100CT(R) Parameter Symbol MBR20045CT(R) MBR20060CT(R) Unit Repetitive peak reverse V 45 60 80 100 V RRM voltage V 57 70 RMS reverse voltage 32 42 V RMS DC blocking voltage V 45 60 80 100 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR20080CT(R) MBR200100CT(R) Parameter Symbol MBR20045CT(R) MBR20060CT(R) Unit Average forward current T = 125 C I 200 200 C 200 200 A F(AV) (per pkg) Peak forward surge I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p current (per leg) Maximum forward V I = 100 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j voltage (per leg) T = 25 C 1 1 1 1 Reverse current at rated j I T = 100 C 10 10 DC blocking voltage 10 10 mA R j (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, R 0.45 0.45 0.45 0.45 C/W JC junction-case, per leg 1 Oct. 2018 MBR20045CT thru MBR200100CTR 2 Oct. 2018