MBR200150CT GeneSiC Semiconductor

MBR200150CT thru MBR200200CTR V = 150 V - 200 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 150 V to 200 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBR200200CT(R) Parameter Symbol MBR200150CT(R) Unit Repetitive peak reverse V 150 200 V RRM voltage V 141 RMS reverse voltage 106 V RMS DC blocking voltage V 150 200 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR200200CT(R) Parameter Symbol MBR200150CT(R) Unit Average forward current T = 125 C I 200 C 200 A F(AV) (per pkg) Peak forward surge I t = 8.3 ms, half sine 1500 1500 A FSM p current (per leg) Maximum forward voltage V I = 100 A, T = 25 C 0.88 0.92 V F FM j (per leg) T = 25 C 3 3 Reverse current at rated j I T = 100 C 10 DC blocking voltage (per 10 mA R j leg) T = 150 C 50 50 j Thermal characteristics Thermal resistance, R 0.45 0.45 C/W JC junction-case (per leg) 1 Oct. 2018 MBR200150CT thru MBR200200CTR 2 Oct. 2018