X-On Electronics has gained recognition as a prominent supplier of MBR20080CT Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MBR20080CT Discrete Semiconductor Modules are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MBR20080CT GeneSiC Semiconductor

MBR20080CT electronic component of GeneSiC Semiconductor
MBR20080CT GeneSiC Semiconductor
MBR20080CT Discrete Semiconductor Modules
MBR20080CT  Semiconductors

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See Product Specifications
Part No. MBR20080CT
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 200A 80P56R
Datasheet: MBR20080CT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 82.676 ea
Line Total: USD 3307.04 
Availability - 0
MOQ: 40  Multiples: 40
Pack Size: 40
Availability Price Quantity
0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 40
Multiples : 40
40 : USD 82.676

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Vf - Forward Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Brand
If - Forward Current
Ifsm - Forward Surge Current
Ir - Reverse Current
Factory Pack Quantity :
Vrrm - Repetitive Reverse Voltage
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBR20080CT from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR20080CT and other electronic components in the Discrete Semiconductor Modules category and beyond.

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MBR20045CT thru MBR200100CTR V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 45 V to 100 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBR20080CT(R) MBR200100CT(R) Parameter Symbol MBR20045CT(R) MBR20060CT(R) Unit Repetitive peak reverse V 45 60 80 100 V RRM voltage V 57 70 RMS reverse voltage 32 42 V RMS DC blocking voltage V 45 60 80 100 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR20080CT(R) MBR200100CT(R) Parameter Symbol MBR20045CT(R) MBR20060CT(R) Unit Average forward current T = 125 C I 200 200 C 200 200 A F(AV) (per pkg) Peak forward surge I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p current (per leg) Maximum forward V I = 100 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j voltage (per leg) T = 25 C 1 1 1 1 Reverse current at rated j I T = 100 C 10 10 DC blocking voltage 10 10 mA R j (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, R 0.45 0.45 0.45 0.45 C/W JC junction-case, per leg 1 Oct. 2018 MBR20045CT thru MBR200100CTR 2 Oct. 2018

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
GENESIC SEMICONDUCTOR INC.
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