MBR2X030A100 GeneSiC Semiconductor

MBR2X030A100 V = 100 V RRM Schottky Rectifier I = 60 A Module Type 60 A F(AV) Features High Surge Capability Type 100 V V RRM Isolation Type Package SOT-227 Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings Conditions Parameter Symbol Value Unit Maximum recurrent peak reverse voltage V 100 V RRM V Maximum DC blocking voltage 100 V DC Maximum RMS Voltage V 70 V RMS Operating temperature T -40 to 150 C j T Storage temperature -40 to 150 C stg Electrical characteristics at 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit I T = 110 C Average forward current (per pkg) C 60 A F(AV) Peak forward surge current (per leg) I 8.3 ms, half sine 500 A FSM I = 30 A, T = 25 C Maximum instantaneous forward voltage* 0.84 V FM j V F (per leg) I = 30 A, T = 125 C 0.75 V FM j 1 mA T = 25 C j Maximum instantaneous reverse current at I T = 100 C R 10 mA j rated DC blocking voltage (per leg) T = 150 C 30 mA j V A.C. 1 minute Isolation voltage 2500 V iSO Thermal characteristics Maximum thermal resistance junction to case R 1.20 C/W jc (per leg) * Pulse Test: Pulse width 300 s, Duty < 2 % 1 Oct. 2018 MBR2X030A100 2 Oct. 2018