MBR50040CTR GeneSiC Semiconductor

MBR50020CT thru MBR50040CTR V = 20 V - 40 V RRM Silicon Power I = 500 A F(AV) Schottky Diode Features High Surge Capability Twin Tower Package Types from 20 V to 40 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBR50035CT(R) MBR50040CT(R) Parameter Symbol MBR50020CT(R) MBR50030CT(R) Unit Repetitive peak reverse V 20 30 35 40 V RRM voltage V 25 28 RMS reverse voltage 14 21 V RMS DC blocking voltage V 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBR50035CT(R) MBR50040CT(R) Parameter Symbol MBR50020CT(R) MBR50030CT(R) Unit Average forward current T = 125 C I 500 500 C 500 500 A F(AV) (per pkg) Peak forward surge I t = 8.3 ms, half sine 3500 3500 3500 3500 A FSM p current (per leg) Maximum forward V I = 250 A, T = 25 C 0.75 0.75 0.75 0.75 V F FM j voltage (per leg) T = 25 C 1 1 1 1 Reverse current at rated j I T = 100 C 10 10 DC blocking voltage 10 10 mA R j (per leg) T = 150 C 50 50 50 50 j Thermal characteristics Thermal resistance, R 0.30 0.30 0.30 0.30 C/W JC junction-case, per leg 1 Oct. 2018 MBR50020CT thru MBR50040CTR 2 Oct. 2018