MBR80100 GeneSiC Semiconductor

MBR8045 thru MBR80100R V = 45 V - 100 V RRM Silicon Power I = 80 A F(AV) Schottky Diode Features High Surge Capability DO-5 Package Types from 45 V to 100 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltag V 45 60 80 100 V RRM V 50 70 RMS reverse voltage 32 42 V RMS DCDC blockingblocking vvoltageoltage VV 4545 6060 8080 100100 VV DCDC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Average forward current (per I T = 125 C 80 80 80 80 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 1000 1000 1000 1000 A FSM p (per leg) Maximum forward voltage V I = 80 A, T = 25 C 0.84 0.84 V F FM j 0.75 0.78 (per leg) T = 25 C 11 11 j Maximum instantaneous I T = 100 C 10 10 reverse current at rated DC 10 10 mA R j blocking voltage (per leg) T = 150 C 20 20 20 20 j Thermal characteristics Thermal resistance, junction- R 0.50 0.50 0.50 0.50 C/W JC case (per leg) Inch ponds Mounting torque 30 30 30 30 (in-pb) 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/MBR8045 thru MBR80100R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/