MBRH12020 GeneSiC Semiconductor

MBRH12020 thru MBRH12040R V = 20 V - 40 V RRM Silicon Power I = 120 A F(AV) Schottky Diode Features High Surge Capability D-67 Package Types from 20 V to 40 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRH12035(R) MBRH12040(R) Parameter Symbol MBRH12020(R) MBRH12030(R) Unit Repetitive peak reverse V 20 30 35 40 V RRM voltage V 25 28 RMS reverse voltage 14 21 V RMS DC blocking voltage V 20 30 35 40 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRH12035(R) MBRH12040(R) Parameter Symbol MBRH12020(R) MBRH12030(R) Unit Average forward current T = 125 C I 120 120 C 120 120 A F(AV) (per pkg) I t = 8.3 ms, half sine Peak forward surge current 2000 2000 2000 2000 A FSM p Maximum instantaneous V I = 120 A, T = 25 C 0.70 0.70 V 0.70 0.70 F FM j forward voltage T = 25 C 1 1 1 1 j Maximum instantaneous reverse current at rated DC I T = 100 C 10 10 10 10 mA R j blocking voltage T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, junction- R 0.48 0.48 0.48 0.48 C/W JC case 1 Oct. 2018 MBRH12020 thru MBRH12040R 2 Oct. 2018