MBRH200150R GeneSiC Semiconductor

MBRH200150 thru MBRH200200R V = 150 V - 200 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability D-67 Package Types from 150 V to 200 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRH200200(R) Parameter Symbol MBRH200150(R) Unit Repetitive peak reverse V 150 200 V RRM voltage V 141 RMS reverse voltage 106 V RMS DC blocking voltage V 150 150 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRH200200(R) Parameter Symbol MBRH200150(R) Unit Average forward current (per T = 125 C I 200 C 200 A F(AV) pkg) I t = 8.3 ms, half sine Peak forward surge current 3000 3000 A FSM p Maximum instantaneous V I = 200 A, T = 25 C 0.92 V 0.88 F FM j forward voltage T = 25 C 1 1 j Maximum instantaneous reverse current at rated DC I T = 100 C 10 10 mA R j blocking voltage T = 150 C 50 50 j Thermal characteristics Thermal resistance, junction- R 0.35 0.35 C/W JC case 1 Oct. 2018 MBRH200150 thru MBRH200200R 2 Oct. 2018