MBRH20080 GeneSiC Semiconductor

MBRH20045 thru MBRH200100R V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability D-67 Package Types from 45 V to 100 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRH20080(R) MBRH200100(R) Parameter Symbol MBRH20045(R) MBRH20060(R) Unit Repetitive peak reverse V 45 60 80 100 V RRM voltage V 57 70 RMS reverse voltage 32 42 V RMS DC blocking voltage V 45 60 80 100 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRH20080(R) MBRH200100(R) Parameter Symbol MBRH20045(R) MBRH20060(R) Unit Average forward current T 136 C I 200 200 C 200 200 A F (per pkg) I T = 25 C, t = 8.3 ms Peak forward surge current 3000 3000 3000 3000 A FSM C p Maximum instantaneous V I = 200 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j forward voltage T = 25 C 1 1 1 1 j Maximum instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage T = 150 C 50 50 j 50 50 Thermal characteristics Thermal resistance, junction R 0.35 0.35 0.35 0.35 C/W thJC - case 1 Oct. 2018 MBRH20045 thru MBRH200100R 2 Oct. 2018