MBRH240100 GeneSiC Semiconductor

MBRH24045 thru MBRH240100R V = 45 V - 100 V RRM Silicon Power I = 240 A F(AV) Schottky Diode Features High Surge Capability D-67 Package Types from 45 V to 100 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRH24080(R) MBRH240100(R) Parameter Symbol MBRH24045(R) MBRH24060(R) Unit Repetitive peak reverse V 45 60 80 100 V RRM voltage V 57 70 RMS reverse voltage 32 42 V RMS DC blocking voltage V 45 60 80 100 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MBRH24080(R) MBRH240100(R) Parameter Symbol MBRH24045(R) MBRH24060(R) Unit Average forward current T = 125 C I 240 240 C 240 240 A F(AV) (per pkg) I t = 8.3 ms, half sine Peak forward surge current 3300 3300 3300 3300 A FSM p Maximum instantaneous V I = 240 A, T = 25 C 0.84 0.84 V 0.72 0.78 F FM j forward voltage T = 25 C 1 1 1 1 j Maximum instantaneous reverse current at rated DC I T = 100 C 10 10 10 10 mA R j blocking voltage T = 150 C 50 50 50 50 j Thermal characteristics Thermal resistance, junction- R 0.30 0.30 0.30 0.30 C/W JC case 1 Oct. 2018 MBRH24045 thru MBRH240100R 2 Oct. 2018