X-On Electronics has gained recognition as a prominent supplier of MBRT20060 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. MBRT20060 Discrete Semiconductor Modules are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

MBRT20060 GeneSiC Semiconductor

MBRT20060 electronic component of GeneSiC Semiconductor
MBRT20060 GeneSiC Semiconductor
MBRT20060 Discrete Semiconductor Modules
MBRT20060 Semiconductors

Images are for reference only
See Product Specifications
Part No. MBRT20060
Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 60V 200A Schottky Recovery
Datasheet: MBRT20060 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 128.0625 ea
Line Total: USD 128.06 
Availability - 1
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 1  Multiples: 1
Pack Size: 1

 MBRT20060 More Buying Options & Price Grid(s)

Availability Price Quantity
1
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 128.0625
5 : USD 126.175
10 : USD 110.675
20 : USD 110.1125
40 : USD 109.5625
60 : USD 109.0125
80 : USD 108.475

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Vf - Forward Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
If - Forward Current
Ifsm - Forward Surge Current
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
Vrrm - Repetitive Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBRT20060 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRT20060 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

MBRT20045 thru MBRT200100R V = 45 V - 100 V RRM Silicon Power I = 200 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 45 V to 100 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT20080(R) MBRT200100(R) Parameter Symbol MBRT20045(R) MBRT20060(R) Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V RMS reverse voltage 32 42 56 70 V RMS V 80 100 DC blocking voltage 45 60 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT20045(R) MBRT20060(R) MBRT20080(R) MBRT200100(R) Unit Average forward current (per I T = 125 C 200 200 200 200 A F(AV) C pkg) Peak forward surge current I t = 8.3 ms, half sine 1500 1500 1500 1500 A FSM p (per leg) Maximum instantaneous V I = 100 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j forward voltage (per leg) T = 25 C 1 1 1 1 j Maximum instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 30 30 30 30 j Thermal characteristics Thermal resistance, junction- R 0.45 0.45 0.45 0.45 C/W JC case (per leg) 1 Oct. 2018 MBRT20045 thru MBRT200100R 2 Oct. 2018

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

GENESIC SEMI may also be referenced as

GENESIC SEMICONDUCTOR INC.

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