MBRT40060R GeneSiC Semiconductor

MBRT40045 thru MBRT400100R V = 45 V - 100 V RRM Silicon Power I = 400 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 45 V to 100 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT40080(R) MBRT400100(R) Parameter Symbol MBRT40045(R) MBRT40060(R) Unit Repetitive peak reverse voltage V 45 60 80 100 V RRM V RMS reverse voltage 32 42 56 70 V RMS V 80 100 DC blocking voltage 45 60 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT40045(R) MBRT40060(R) MBRT40080(R) MBRT400100(R) Unit Average forward current (per T =125 C I 400 400 400 400 A C F(AV) pkg) Peak forward surge current (per I t = 8.3 ms, half sine 3000 3000 3000 3000 A FSM p leg) Maximum instantaneous forward V I = 200 A, T = 25 C 0.70 0.75 0.84 0.84 V F FM j voltage (per leg) T = 25 C 1 1 1 1 j Maximum Instantaneous reverse I T = 100 C 10 10 current at rated DC blocking j 10 10 mA R voltage (per leg) T = 150 C 50 50 50 50 j Thermal characteristics Maximum thermal resistance, R 0.35 0.35 0.35 0.35 C/W JC junction - case (per leg) 1 Oct. 2018 MBRT40045 thru MBRT400100R 2 Oct. 2018