MBRT600200R GeneSiC Semiconductor

MBRT600150 thru MBRT600200R V = 150 V - 200 V RRM Silicon Power I = 600 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 150 V to 200 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT600200(R) Parameter Symbol MBRT600150(R) Unit Repetitive peak reverse voltage V 150 200 V RRM V RMS reverse voltage 106 141 V RMS V 200 DC blocking voltage 150 V DC T -55 to 150 Operating temperature -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT600150(R) MBRT600200(R) Unit Average forward current (per I T = 125 C 600 C 600 A F(AV) pkg) Peak forward surge current I t = 8.3 ms, half sine 4000 4000 A FSM p (per leg) Maximum instantaneous forward V I = 300 A, T = 25 C 0.92 V F FM j 0.88 voltage (per leg) T = 25 C 1 1 j Maximum instantaneous I T = 100 C reverse current at rated DC 10 10 mA R j blocking voltage (per leg) T = 150 C 50 50 j Thermal characteristics Thermal resistance, junction- R 0.28 0.28 C/W JC case (per leg) 1 Oct. 2018 MBRT600150 thru MBRT600200R 2 Oct. 2018