MBRT60040R GeneSiC Semiconductor

MBRT60020 thru MBRT60040R V = 20 V - 40 V RRM Silicon Power I = 600 A F(AV) Schottky Diode Features High Surge Capability Three Tower Package Types from 20 V to 40 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MBRT60035(R) MBRT60040(R) Parameter Symbol MBRT60020(R) MBRT60030(R) Unit Repetitive peak reverse voltage V 20 30 35 40 V RRM V RMS reverse voltage 14 21 25 28 V RMS V 35 40 DC blocking voltage 20 30 V DC T -55 to 150 -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MBRT60020(R) MBRT60030(R) MBRT60035(R) MBRT60040(R) Unit Average forward current (per I T =125 C 600 600 C 600 600 A F(AV) pkg) Peak forward surge current I t = 8.3 ms, half sine 4000 4000 4000 4000 A FSM p (per leg) Maximum instantaneous V I = 300 A, T = 25 C 0.75 0.75 V 0.75 0.75 F FM j forward voltage (per leg) T = 25 C 1 1 1 1 j Maximum Instantaneous I T = 100 C reverse current at rated DC 10 10 10 10 mA R j blocking voltage (per leg) T = 150 C 50 50 j 50 50 Thermal characteristics Maximum thermal resistance, R 0.28 0.28 0.28 0.28 C/W JC junction - case (per leg) 1 Oct. 2018 MBRT60020 thru MBRT60040R 2 Oct. 2018