MSRTA300160(A)D GeneSiC Semiconductor

MSRTA300120(A)D thru MSRTA300160(A)D V = 1200 V - 1600 V RRM Silicon Standard I = 300 A F(AV) Recovery Diode Features High Surge Capability Heavy Three Tower Package Types from 1200 V to 1600 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Conditions MSRTA300120(A)D MSRTA300140(A)D MSRTA300160(A)D Unit Repppetitive peak reverse voltagge V 1200 1400 1600 V RRM V 1200 1400 1600 DC blocking voltage V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MSRTA300120(A)D MSRTA300140(A)D MSRTA300160(A)D Parameter Symbol Unit Average forward current (per T = 125 C I 300 300 300 A C F(AV) leg) Peak forward surge current I t = 8.3 ms, half sine 3800 3800 3800 A FSM p (per leg) Maximum instantaneous V I = 300 A, T = 25 C 1.1 1.1 1.1 V F FM j forward voltage (per leg) Maximum instantaneous T = 25 C 20 20 20 A j I reverse current at rated DC R T = 150 C 10 10 10 blocking voltage (per leg) j mA Thermal characteristics Maximum thermal resistance, R 0.28 0.28 0.28 C/W jc junction - case (per leg) 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/MSRTA300120(A)D thru MSRTA300160(A)D 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/