MUR10020CT GeneSiC Semiconductor

MUR10005CT thru MUR10020CTR V = 50 V - 200 V RRM Silicon Super Fast I = 100 A F(AV) Recovery Diode Features High Surge Capability Twin Tower Package Types from 50 V to 200 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MUR10005CT(R) MUR10010CT(R) MUR10020CT(R) Unit Repetitive peak reverse voltage V 50 100 200 V RRM V 140 RMS reverse voltage 35 70 V RMS DC blocking voltage V 50 100 200 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MUR10020CT(R) Parameter Symbol MUR10005CT(R) MUR10010CT(R) Unit Average forward current (per T = 140 C I 100 C 100 100 A F(AV) pkg) Peak forward surge current (per I t = 8.3 ms, half sine 1500 p 1500 1500 A FSM leg) Maximum instantaneous forward V I = 50 A, T = 25 C 1.0 1.0 1.0 V F FM j voltage (per leg) Maximum reverse current at T = 25 C 25 j 25 25 A rated DC blocking voltage (per I R T = 125 C 3 3 3 mA j leg) I =0.5 A, I =1.0 A, Maximum reverse recovery time F R T 75 75 75 nS rr (per leg) I = 0.25 A RR Thermal characteristics Maximum thermal resistance, R 1.0 1.0 1.0 C/W JC junction - case (per leg) 1 Oct. 2018 MUR10005CT thru MUR10020CTR 2 Oct. 2018