MUR10060CT GeneSiC Semiconductor

MUR10040CT thru MUR10060CTR V = 400 V - 600 V RRM Silicon Super Fast I = 100 A F(AV) Recovery Diode Features High Surge Capability Twin Tower Package Types from 400 to 600 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MUR10040CT(R) MUR10060CT(R) Unit Repetitive peak reverse voltage V 400 600 V RRM V 420 RMS reverse voltage 280 V RMS DC blocking voltage V 400 600 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MUR10060CT(R) Parameter Symbol MUR10040CT(R) Unit T = 140 C I 100 Average forward current (per pkg) C 100 A F(AV) Peak forward surge current (per I t = 8.3 ms, half sine 1500 p 1500 A FSM leg) Maximum instantaneous forward V I = 50 A, T = 25 C 1.3 1.7 V F FM j voltage (per leg) T = 25 C 25 25 A Maximum reverse current at rated j I R DC blocking voltage (per leg) T = 125 C 3 3 mA j I =0.5 A, I =1.0 A, Maximum reverse recovery time F R T 110 90 nS rr (per leg) I = 0.25 A RR Thermal characteristics Maximum thermal resistance, R 1.0 1.0 C/W JC junction - case (per leg) 1 Oct. 2018 MUR10040CT thru MUR10060CTR 2 Oct. 2018