Product Information

MUR2X060A06

MUR2X060A06 electronic component of GeneSiC Semiconductor

Datasheet
Discrete Semiconductor Modules 600V 120A Fwd Super Fast Recovery

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 58.1364 ea
Line Total: USD 58.14

112 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
159 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

MUR2X060A06
GeneSiC Semiconductor

1 : USD 49.036
10 : USD 43.6655
25 : USD 41.8255
52 : USD 40.7675
104 : USD 40.756
260 : USD 40.227

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Configuration
Brand
Max Surge Current
Recovery Time
If - Forward Current
Ir - Reverse Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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MUR2X060A06 V = 600 V RRM Super Fast Recovery Rectifier I = 120 A Module Type 120 A F(AV) Features High Surge Capability Type 600 V V RRM Isolation Type Package SOT-227 Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings Conditions Parameter Symbol Value Unit Maximum recurrent peak reverse voltage V 600 V RRM V Maximum DC blocking voltage 600 V DC Maximum RMS Voltage V 420 V RMS Operating temperature T -55 to 175 C j T Storage temperature -55 to 175 C stg Electrical characteristics at 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit I T = 125 C Average forward current (per pkg) C 120 A F(AV) Peak forward surge current (per leg) I 8.3 ms, half sine 900 A FSM Maximum instantaneous forward voltage* I = 60 A, T = 25 C V 1.5 V F FM j (per leg) T = 25 C Maximum instantaneous reverse current at 25 j A I R rated DC blocking voltage (per leg) T = 150 C 3 mA j Isolation voltage V A.C. 1 minute 2500 V iSO I =0.5 A, I =1.0 A, I = 0.25 A Maximum reverse recovery time (per leg) t F R RR 90 ns rr Thermal characteristics Maximum thermal resistance junction to case R 0.8 C/W jc (per leg) * Pulse Test: Pulse width 300 s, Duty < 2 % 1 Oct. 2018 MUR2X060A06 2 Oct. 2018

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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