MUR2X060A06 GeneSiC Semiconductor

MUR2X060A06 V = 600 V RRM Super Fast Recovery Rectifier I = 120 A Module Type 120 A F(AV) Features High Surge Capability Type 600 V V RRM Isolation Type Package SOT-227 Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings Conditions Parameter Symbol Value Unit Maximum recurrent peak reverse voltage V 600 V RRM V Maximum DC blocking voltage 600 V DC Maximum RMS Voltage V 420 V RMS Operating temperature T -55 to 175 C j T Storage temperature -55 to 175 C stg Electrical characteristics at 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit I T = 125 C Average forward current (per pkg) C 120 A F(AV) Peak forward surge current (per leg) I 8.3 ms, half sine 900 A FSM Maximum instantaneous forward voltage* I = 60 A, T = 25 C V 1.5 V F FM j (per leg) T = 25 C Maximum instantaneous reverse current at 25 j A I R rated DC blocking voltage (per leg) T = 150 C 3 mA j Isolation voltage V A.C. 1 minute 2500 V iSO I =0.5 A, I =1.0 A, I = 0.25 A Maximum reverse recovery time (per leg) t F R RR 90 ns rr Thermal characteristics Maximum thermal resistance junction to case R 0.8 C/W jc (per leg) * Pulse Test: Pulse width 300 s, Duty < 2 % 1 Oct. 2018 MUR2X060A06 2 Oct. 2018