MURH10020R GeneSiC Semiconductor

MURH10005 thru MURH10020R V = 50 V - 200 V RRM Silicon Super Fast I = 100 A F(AV) Recovery Diode Features High Surge Capability D-67 Package Types from 50 V to 200 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MURH10005(R) MURH10010(R) MURH10020(R) Unit Repetitive peak reverse voltage V 50 100 200 V RRM V 140 RMS reverse voltage 35 70 V RMS DC blocking voltage V 50 100 200 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MURH10020(R) Parameter Symbol MURH10005(R) MURH10010(R) Unit Average forward current (per T = 140 C I 100 C 100 100 A F(AV) pkg) I t = 8.3 ms, half sine 2000 Peak forward surge current p 2000 2000 A FSM Maximum instantaneous V I = 100 A, T = 25 C 1.0 1.0 1.0 V F FM j forward voltage T = 25 C 25 25 25 A Maximum reverse current at j I R rated DC blocking voltage T = 125 C 3 3 3 mA j I =0.5 A, I =1.0 A, F R T 75 Maximum reverse recovery time 75 75 nS rr I = 0.25 A RR Thermal characteristics Maximum thermal resistance, R 0.45 0.45 0.45 C/W JC junction - case 1 Oct. 2018 MURH10005 thru MURH10020R 2 Oct. 2018