MURH10060 GeneSiC Semiconductor

MURH10040 thru MURH10060R V = 400 V - 600 V RRM Silicon Super Fast I = 100 A F(AV) Recovery Diode Features High Surge Capability D-67 Package Types from 400 V to 600 V V RRM Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MURH10040(R) MURH10060(R) Unit V 600 Repetitive peak reverse voltage 400 V RRM RMS reverse voltage V 280 420 V RMS V 600 DC blocking voltage 400 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MURH10060(R) Parameter Symbol MURH10040(R) Unit I T = 140 C 100 Average forward current (per pkg) C 100 A F(AV) t = 8.3 ms, half sine Peak forward surge current I 2000 2000 A p FSM Maximum instantaneous forward V I = 100 A, T = 25 C 1.30 1.70 V F FM j voltage T = 25 C 25 25 A Maximum reverse current at rated j I R DC blocking voltage T = 125 C 3 3 mA j I =0.5 A, I =1.0 A, F R T Maximum reverse recovery time 90 110 nS rr I = 0.25 A RR Thermal characteristics Maximum thermal resistance, R 0.45 0.45 C/W JC junction - case 1 Oct. 2018 MURH10040 thru MURH10060R 2 Oct. 2018