MURT40060 GeneSiC Semiconductor

MURT40040 thru MURT40060R V = 400 V - 600 V RRM Silicon Super Fast I = 400 A F(AV) Recovery Diode Features High Surge Capability Three Tower Package Types from 400 V to 600 V V RRM Isolation Type Package Electrically Isolated base plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MURT40060(R) Parameter Symbol MURT40040(R) Unit V Repetitive peak reverse voltage 400 600 V RRM V 424 RMS reverse voltage 283 V RMS DC blocking voltage V 400 600 V DC T -55 to 150 Operating temperature -55 to 150 C j T Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MURT40040(R) MURT40060(R) Unit I T = 125 C 400 Average forward current (per pkg) 400 A F(AV) C I t = 8.3 ms, half sine Peak forward surge current (per leg) 3300 3300 A FSM p Maximum instantaneous forward V I = 200 A, T = 25 C 1.70 V F FM j 1.35 voltage (per leg) Maximum instantaneous reverse T = 25 C 25 j 25 A I current at rated DC blocking voltage R T = 125 C 3 3 mA (per leg) j I =0.5 A, I =1.0 A, Maximum reverse recovery time (per F R T 180 240 nS rr I = 0.25 A leg) RR Thermal characteristics Maximum thermal resistance, junction R 0.35 0.35 C/W JC - case (per leg) 1 Oct. 2018 MURT40040 thru MURT40060R 2 Oct. 2018