MURTA50040 GeneSiC Semiconductor

MURTA50020 thru MURTA50040R V = 200 V - 400 V RRM Silicon Super Fast I = 500 A F(AV) Recovery Diode Features High Surge Capability Heavy Three Tower Package Types from 200 V to 400 V V RRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions MURTA50020(R) MURTA50040(R) Unit V 400 Repetitive peak reverse voltage 200 V RRM RMS reverse voltage V 141 283 V RMS V 400 DC blocking voltage 200 V DC Operating temperature T -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions MURTA50040(R) Parameter Symbol MURTA50020(R) Unit T = 100 C Average forward current (per pkg) I 500 500 A C F(AV) t = 8.3 ms, half sine I 3800 Peak forward surge current (per leg) p 3800 A FSM Maximum instantaneous forward V I = 250 A, T = 25 C 1.0 1.3 V F FM j voltage (per leg) Maximum instantaneous reverse T = 25 C 25 j 25 A I current at rated DC blocking voltage R T = 125 C 5 5 mA (per leg) j I =0.5 A, I =1.0 A, Maximum reverse recovery time (per F R T 200 200 ns rr leg) I = 0.25 A RR Thermal characteristics Maximum thermal resistance, junction - R 0.30 0.30 C/W JC case (per leg) 1 Oct. 2018 MURTA50020 thru MURTA50040R 2 Oct. 2018