S85YR GeneSiC Semiconductor

S85V thru S85YR V = 1400 V - 1600 V RRM Silicon Standard I = 85 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 1400 V to 1600 V V RRM Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A 3. Stud is base. Stud Stud (R) Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions S85V (R) S85Y (R) Parameter Symbol Unit Repetitive peak reverse voltage V 1400 1600 V RRM V RMS reverse voltage 990 1130 V RMS V 1400 1600 DC blocking voltage V DC T 110 C Continuous forward current I 85 85 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1800 1800 A F,SM C p current, Half Sine Wave T -55 to 150 -55 to 150 Operating temperature C j T -55 to 150 -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions S85V (R) S85Y (R) Parameter Symbol Unit V I = 85 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j V = 100 V, T = 25 C 10 10 A R j I Reverse current R V = 100 V, T = 150 C 4.5 4.5 mA R j Thermal characteristics Thermal resistance, junction - R 0.65 0.65 C/W thJC case 1 Oct. 2018 A C A C Stud Stud (R) S85V thru S85YR 2 Oct. 2018