HRF-SW1030-FL-TR Honeywell

HRF-SW1030 SP6T Absorptive RF Switch DC to 2.5GHz Operation The Honeywell HRF-SW1030 is a high performance single pole six throw (SP6T) absorptive RF switch ideal for use in wireless basestation and handset applications that require minimum power and minimum insertion loss. The HRF-SW1030 is manufactured with Honeywell s patented Silicon On Insulator (SOI) CMOS technology, which provides the performance of GaAs with the economy and integration capabilities of conventional CMOS technology. These switches are DC coupled to improve lower operating frequency, frequency response and reduce the number of DC bias points required. HRF-SW1030 in VQFN Package FEATURES Typical High Isolation Of > 42 dB 2 GHz Typical Low Insertion Loss Of 1.6 dB 1 GHz Integrated CMOS Control Logic DC-coupled, bi-directional RF Path Single Positive Supply Voltage Ultra Small VQFN Packaging Impedance matched for 50 Ohm systems Lead-free, RoHS compliant and halogen-free o RF ELECTRICAL SPECIFICATIONS + 25 C Results V = 5.0 +/- 10%, V = 0 unless otherwise stated, Z = 50 Ohms DD SS 0 Contact Honeywell for relative performance at other supply configurations Parameter Test Condition Frequency Minimum Typical Maximum Units 1.0 GHz 1.6 2.5 dB Insertion Loss 2.0 GHz 2.1 3.3 dB 2.5 GHz 2.4 3.8 dB 1.0 GHz 36 50 dB Isolation 2.0 GHz 30 42 dB 3.0 GHz 27 40 dB Return Loss -10 -15 dB V =Gnd 1.0 GHz 16 dBm SS Input P1dB V = -5V 1.0 GHz 25 dBm SS Two-Tone Inputs, + 5 dBm Input IP3 V = Gnd 2.0 GHz 33 dBm SS V = -5V 2.0 GHz 35 dBm SS Trise, Tfall 10% To 90% 10 ns Ton, Toff 50% Cntl To 90% / 10% RF 20 ns HRF-SW1030 DC ELECTRICAL SPECIFICATIONS + 25C Parameter Minimum Typical Maximum Units 1 V 3.3 5.0 5.5 V DD V -5.0 V SS I <5 35 uA DD CMOS Logic Level (0) 0 0.8 V CMOS Logic Level (1) V 0.8 V V DD DD Input Leakage Current 10 uA Note 1 - Performance curves are for VDD = +5.0 +/- 10% 1 ABSOLUTE MAXIMUM RATINGS Parameter Absolute Maximum Units V +6.0 V DD V -5.5 V SS Vin Digital Logic 0 -0.6 V Vin Digital Logic 1 V + 0.6 V DD Input Power > 35 dBm 2 ESD Voltage 400 V O Moisture Sensitivity Level Level 3 260 C Operating Temperature Range -40 to +85 C Storage Temperature Range -65 to +125 C Note 1 - Operation of this device beyond any of these parameters may cause permanent damage. Note 2 - Although the HRF-SW1030 contains ESD protection circuitry on all digital inputs, precautions should be taken to ensure that the Absolute Maximum Ratings are not exceeded. Latch-Up: Unlike conventional CMOS digital switches, Honeywells HRF-SW1030 is immune to latch-up. TRUTH TABLE RF Output RF Output RF Output RF Output RF Output RF Output C2 C1 C0 1 2 3 4 5 6 0 0 1 RFINPUT 0 1 0 RFINPUT 0 1 1 RFINPUT 1 0 0 RFINPUT 1 0 1 RFINPUT 1 1 0 RFINPUT 0 = CMOS Low,1 = CMOS High Note: For codes 000 and 111 all outputs are in the terminated isolation state. PIN CONFIGURATIONS Pin Function Pin Function Pin Function 1 GROUND 7 VDD 13 GROUND 19 GROUND 2 GROUND 8 C2 14 GROUND 20 GROUND 3 RFOUTPUT5 9 C1 15 RFOUTPUT2 21 RFINPUT 4 GROUND 10 C0 16 GROUND 22 GROUND 5 GROUND 11 VSS 17 GROUND 23 GROUND 6 RFOUTPUT4 12 RFOUTPUT3 18 RFOUTPUT1 24 RFOUTPUT6 Note: Bottom ground plate must be grounded for proper RF performance. 2 www.honeywell.com/microwave